World's First Climate Tech Platform | Free Delivery in India | Global Shipping

For Bulk Enquiry: sales@envmart.com

onsemi QFET N-Channel MOSFET 15.6 A 100 V Enhancement Mode 3-Pin TO-252 FQD19N10LTM

Free Delivery in India | Lowest Global Shipping Charges

onsemi QFET N-Channel MOSFET 15.6 A 100 V Enhancement Mode 3-Pin TO-252 FQD19N10LTM

Name: onsemi QFET N-Channel MOSFET 15.6 A 100 V Enhancement Mode 3-Pin TO-252 FQD19N10LTM
Brand: onsemi
SKU: 207591
Price: 1.04 USD
Availability: InStock



Category MOSFET Brand onsemi Condition New

Specifications

Country of Origin	India
Brand	onsemi
Height	2.3mm
Length	6.6mm
Model	FQD19N10LTM
Width	6.1mm
Mount Type	Surface
Series	QFET
Maximum Operating Temperature	150°C
Package Type	TO-252
Minimum Operating Temperature	-55°C
Pin Count	3
Channel Type	N
Maximum Continuous Drain Current Id	15.6A
Maximum Drain Source Voltage Vds	100V
Maximum Drain Source Resistance Rds	100mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	2.5W
Typical Gate Charge Qg @ Vgs	14nC
Maximum Gate Source Voltage Vgs	-20, +20V
Forward Voltage Vf	1.5V

Key Features

This device operates in enhancement mode for efficient switching performance.
It features low on-resistance of 100 milliohms for reduced conduction losses.
Maximum gate-source voltage rating is ±20 V, supporting reliable gate drive.
Maximum power dissipation is 2.5 W ensuring effective thermal handling.
The compact dimensions of 6.6 mm length, 6.1 mm width, and 2.3 mm height enable space-saving PCB design.
Typical gate charge is 14 nC, minimizing switching losses in fast switching applications.
Operating temperature range spans from -55°C to +150°C for industrial and automotive environments.
This MOSFET is ideal for power supplies, DC-DC converters, lighting ballasts, and motion control systems.

Product Description

onsemi FQD19N10LTM is a QFET® N-Channel MOSFET designed for high performance in power switching applications. It supports a continuous drain current of 15.6 A and a maximum drain-source voltage of 100 V. The device employs enhancement mode operation and is housed in a 3-pin TO-252 surface-mount package, facilitating integration into compact electronic assemblies.

With an on-resistance of just 100 milliohms, the MOSFET reduces conduction losses, improving efficiency in circuits such as power factor correction (PFC) modules, DC-DC converters, and lighting ballasts. The gate voltage tolerance of ±20 V ensures reliable switching control, while the typical gate charge of 14 nC minimizes switching losses, making it well-suited for high-frequency applications.

The device dissipates up to 2.5 W of power and operates reliably across a wide temperature range from -55°C to 150°C, supporting demanding industrial and automotive environmental conditions. The compact physical dimensions (6.6 mm length, 6.1 mm width, 2.3 mm height) allow for dense circuit layouts and efficient heat dissipation.

This MOSFET is part of the QFET® series from onsemi (formerly Fairchild Semiconductor), which utilizes advanced planar MOSFET technology to deliver superior switching characteristics. The technology reduces on-state losses and switching losses, resulting in improved figure of merit (FOM) compared to traditional planar MOSFETs.

Suitable for use in industrial, commercial, and laboratory electronics, the FQD19N10LTM supports applications including power supplies, plasma display panels, lighting controls, and motion control systems across manufacturing and HVAC sectors.

Enhancement mode N-Channel MOSFET with 15.6 A max drain current. Max Drain-Source Voltage: 100 V, low Rds(on) of 100 mΩ. Surface-mount TO-252 package with 3 pins for compact design. Maximum Power Dissipation: 2.5 W, operating temperature from -55°C to 150°C.

Typical gate charge 14 nC for reduced switching losses. Robust for industrial, automotive, and commercial electronics applications. Advanced QFET® planar technology ensures superior efficiency. Explore more semiconductor components and MOSFETs with EnvMart for your industrial and electronic design needs.