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onsemi QFET Type P-Channel MOSFET, 33 A, 100 V Enhancement Mode, 3-Pin TO-263 FQB34P10TM
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 4.83mm |
| Length | 10.67mm |
| Model | FQB34P10TM |
| Width | 9.65mm |
| Mount Type | Surface |
| Series | QFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-263 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 33A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 60mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 3.75W |
| Typical Gate Charge Qg @ Vgs | 85nC |
| Maximum Gate Source Voltage Vgs | -25, +25V |
| Forward Voltage Vf | -4V |
Key Features
- Enhancement mode QFET Type P-Channel MOSFET with 33 A continuous drain current.
- Maximum drain-source voltage rating of 100 V for high voltage applications.
- Compact 3-pin TO-263 surface mount package for efficient thermal management.
- Low maximum drain-source resistance of 60 milliohms reduces conduction losses.
- Maximum power dissipation rated at 3.75 watts suitable for moderate power circuits.
- Wide operating temperature range from -55°C up to 175°C for rugged use.
- Typical gate charge of 85 nanocoulombs enables fast switching performance.
- Gate-source voltage tolerance of ±25 V protects against voltage spikes.
Product Description
onsemi FQB34P10TM is a high-performance QFET Type P-Channel Power MOSFET designed for switching applications requiring a continuous drain current capacity of 33 A and a maximum drain-source voltage of 100 V. Packaged in a compact 3-pin TO-263 surface mount package, it offers efficient thermal management and integration into modern electronic assemblies.
This enhancement mode device is optimized for applications needing low resistance conduction with a maximum Rds(on) of 60 milliohms, making it suitable for power management circuits, load switching, and automotive electronics.
The MOSFET withstands operating temperatures from -55°C up to 175°C and supports maximum power dissipation of 3.75 watts, allowing reliable operation in harsh industrial and automotive environments.
The typical gate charge of 85 nanocoulombs at specified gate voltage ensures swift switching, enhancing efficiency in PWM and power conversion uses. Gate source voltage ratings of ±25 V safeguard the component from voltage spikes during operation.
This P-Channel MOSFET is ideal for DC-DC converters, motor drivers, and load switching in industrial equipment. Its robust thermal and electrical specifications cater to applications in automotive, HVAC systems, manufacturing automation, and power supplies.
Physical specifications (L 10.67 mm x W 9.65 mm x H 4.83 mm) facilitate compact PCB layouts in electronic design. Low Rds(on) minimises conduction losses, improving system energy efficiency. The device supports use in applications requiring high voltage and high current handling with enhanced reliability.
Choose onsemi FQB34P10TM for trusted performance in power MOSFET applications requiring durability and efficiency in industrial and automotive sectors. Discover more options in the MOSFET category at EnvMart.
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Frequently Asked Questions
The maximum continuous drain current for this model is 33 A.
This device has a maximum drain-source voltage rating of 100 V, suitable for high voltage applications.
It is packaged in a compact 3-pin TO-263 surface mount package, facilitating efficient thermal management.
The maximum power dissipation rated for this MOSFET is 3.75 watts, making it suitable for moderate power circuits.
The typical gate charge at the specified gate voltage is 85 nanocoulombs, which enables fast switching performance.
This model has a gate-source voltage tolerance of ±25 V, which protects against voltage spikes during operation.
The operating temperature range for this unit is from -55°C to 175°C, allowing for rugged use in various environments.
The physical dimensions are 10.67 mm in length, 9.65 mm in width, and 4.83 mm in height.
The maximum drain-source resistance (Rds(on)) for this model is 60 milliohms, which reduces conduction losses.
It is suitable for applications such as DC-DC converters, motor drivers, and load switching in industrial equipment.
This model features a P-Channel type channel, optimized for enhancement mode operation.
The forward voltage for this MOSFET is -4 V.
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