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onsemi QFET Type P-Channel MOSFET 11.5 A 200 V Enhancement Mode 3-Pin TO-263 FQB12P20TM
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 4.83mm |
| Length | 10.67mm |
| Model | FQB12P20TM |
| Width | 9.65mm |
| Mount Type | Surface |
| Series | QFET |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-263 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 11.5A |
| Maximum Drain Source Voltage Vds | 200V |
| Maximum Drain Source Resistance Rds | 470mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 3.13W |
| Typical Gate Charge Qg @ Vgs | 31nC |
| Maximum Gate Source Voltage Vgs | -30, +30V |
| Forward Voltage Vf | -5V |
Key Features
- Features a high-density cell design for low on-state resistance.
- Offers superior switching performance for power management applications.
- Operates reliably within a temperature range of -55 to 150°C.
- Supports a maximum power dissipation of 3.13 W ensuring rugged operation.
- Equipped with a typical gate charge of 31 nC to optimize switching efficiency.
- Package dimensions include 10.67 mm length, 9.65 mm width, and 4.83 mm height.
- Suitable for DC/DC converters, power management control, and DC motor control.
Product Description
onsemi FQB12P20TM is a QFET Type P-Channel MOSFET designed for enhancement mode switching with a continuous drain current capacity of 11.5 A and a drain-source voltage rating of 200 V. Packaged in a compact TO-263 surface mount format with 3 pins, it features ON Semiconductor's proprietary high cell density DMOS technology to minimize on-state resistance. This enables the device to deliver robust and reliable performance for fast switching applications.
The MOSFET operates efficiently within a wide temperature range from -55°C to 150°C and supports a maximum power dissipation of 3.13 W. Its typical gate charge of 31 nC allows effective switching control with minimal losses, suited for power-sensitive circuits.
This device is optimized for load switching, DC/DC converters, battery protection circuits, and power management control systems. Its rugged construction and high saturation current make it ideal for applications including DC motor control and industrial electronic circuits requiring reliable MOSFET transistors.
High-density cell design ensuring low on-state resistance. Voltage controlled P-Channel configuration for enhanced switching. Maximum drain current of 11.5 A supports demanding load requirements. Maximum drain-source voltage of 200 V for versatile power applications.
Compact TO-263 3-pin surface mount package simplifying board design. Wide operating temperature range from -55°C to 150°C for harsh environments. Typical gate charge 31 nC balances speed and power efficiency. Maximum power dissipation of 3.13 W enables rugged operation.
These features combined make the onsemi FQB12P20TM suitable for industrial, electronic component, power management, and automotive applications requiring advanced MOSFET solutions. EnvMart provides this reliable MOSFET transistor as part of its electronic components portfolio for semiconductor and power switching needs.
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Frequently Asked Questions
This model supports a maximum continuous drain current of 11.5 A, making it suitable for demanding load requirements.
The maximum drain-source voltage rating for this MOSFET is 200 V, allowing for versatile power applications.
The typical gate charge is 31 nC, which helps optimize switching efficiency in power-sensitive circuits.
The package dimensions are 10.67 mm in length, 9.65 mm in width, and 4.83 mm in height.
It operates reliably within a temperature range of -55°C to 150°C, suitable for harsh environments.
This model supports a maximum power dissipation of 3.13 W, ensuring rugged operation during use.
It features a P-Channel configuration, designed for enhancement mode switching.
The TO-263 package has 3 pins, simplifying the board design process.
The maximum gate-source voltage is rated at -30 V to +30 V, providing flexibility in circuit design.
It is optimized for load switching, DC/DC converters, battery protection circuits, and power management control systems.
This model uses a surface mount type, which is advantageous for compact designs.
The maximum drain-source resistance is 470 mΩ, contributing to its low on-state resistance performance.
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