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onsemi Isolated PowerTrench Dual N and P-Channel MOSFET, 8.6 A, 30 V, 8-Pin SOIC FDS8858CZ
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 1.5mm |
| Length | 5mm |
| Model | FDS8858CZ |
| Width | 4mm |
| Mount Type | Surface |
| Series | PowerTrench |
| Maximum Operating Temperature | 150°C |
| Package Type | SOIC |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Number of Elements per Chip | 2 |
| Channel Type | Type N, Type P |
| Maximum Continuous Drain Current Id | 8.6A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 21mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 1.6W |
| Typical Gate Charge Qg @ Vgs | 17nC |
| Maximum Gate Source Voltage Vgs | -25, -20, +20, +25V |
| Forward Voltage Vf | 0.8V |
| Transistor Configuration | Isolated |
| N/P-Channel MOSFET, 6 A, 30 V, 8-Pin SOIC onsemi SI4542DYBrand | onsemi |
Key Features
- The MOSFET features isolated transistor configuration for improved system efficiency.
- Supports a maximum power dissipation of 1.6 W, suitable for moderate power applications.
- Utilizes PowerTrench technology for enhanced switching performance with low gate charge.
- Compliant with typical maximum gate-source voltages of ±25 V and low forward voltage of 0.8 V.
- Designed to operate over a temperature range from -55°C to 150°C, ensuring reliability in diverse environments.
- Compact form factor with dimensions 5 mm x 4 mm x 1.5 mm supports high-density PCB layouts.
- Includes two elements per chip, combining N and P type MOSFETs for versatile circuit design.
Product Description
onsemi FDS8858CZ is a PowerTrench dual N-channel and P-channel MOSFET designed for reliable and efficient switching applications in electronics. This isolated transistor device supports a maximum continuous drain current of 8.6 A and a maximum drain-source voltage of 30 V, making it suitable for moderate power and switching circuits requiring surface mount technology.
Featuring a low typical gate charge of 17 nC at Vgs, and a low drain-source resistance of 21 milliohms, it enables efficient power conversion and minimal losses. The MOSFET's PowerTrench technology integrates shielded-gate structures to optimize the figure of merit (FOM), ensuring improved switching speed and power density.
This device incorporates a soft reverse recovery body diode, reducing the need for snubber circuits and enhancing switching efficiency, particularly in synchronous rectification for AC/DC power supplies. It withstands maximum gate-source voltages of ±25 V and operates safely from -55°C to 150°C, suitable for industrial, commercial, and consumer electronic applications.
The compact 8-pin SOIC package with a length of 5 mm, width of 4 mm, and height of 1.5 mm allows for versatile integration into printed circuit boards where space efficiency is critical. The dual element chip design includes both N and P channel MOSFETs, facilitating various switching topologies in power management and signal amplification.
The MOSFET is ideal for industrial, power management, and electronic component manufacturing environments. It enhances system efficiency and power density in equipment such as power supplies, inverters, and motor drivers.
Enhances switching speed with minimal gate charge for low-loss operation. Suitable for applications needing isolated configuration for improved circuit stability. Compact SOIC surface mount package supports automated assembly processes.
Explore a wide range of semiconductor components including MOSFETs at EnvMart for your electronic design and manufacturing needs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 8.6 A.
It can handle a maximum drain-source voltage of 30 V.
The typical gate charge at Vgs is 17 nC.
This model has dimensions of 5 mm in length, 4 mm in width, and 1.5 mm in height.
It operates safely within a temperature range of -55°C to 150°C.
The maximum power dissipation for this model is 1.6 W.
It features an isolated transistor configuration.
The forward voltage is 0.8 V.
There are two elements per chip, combining N and P type MOSFETs.
This model is designed for surface mounting.
The maximum gate-source voltage is ±25 V.
It is suitable for moderate power applications and switching circuits requiring surface mount technology.
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