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onsemi Isolated PowerTrench 2 Type N, Type P-Channel MOSFET Surface Mount SOIC 8-Pin 8.6 A 30 V Enhancement FDS8858CZ
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 1.5mm |
| Length | 5mm |
| Model | FDS8858CZ |
| Width | 4mm |
| Mount Type | Surface |
| Series | PowerTrench |
| Maximum Operating Temperature | 150°C |
| Package Type | SOIC |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Number of Elements per Chip | 2 |
| Channel Type | Type N, Type P |
| Maximum Continuous Drain Current Id | 8.6A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 21mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 1.6W |
| Typical Gate Charge Qg @ Vgs | 17nC |
| Maximum Gate Source Voltage Vgs | -25, -20, +20, +25V |
| Forward Voltage Vf | 0.8V |
| Transistor Configuration | Isolated |
Key Features
- Dual N-channel and P-channel MOSFET integrated for efficient power switching.
- Maximum continuous drain current of 8.6 A suitable for medium power applications.
- Low drain-source resistance of 21 mΩ reduces conduction losses.
- Enhancement mode operation for precise switching control.
- Maximum gate-source voltage of ±25 V for reliable operation.
- Compact SOIC 8-pin surface mount package for space-saving designs.
- Maximum power dissipation rating of 1.6 W ensuring robust performance.
- Operating temperature range from -55°C to 150°C for industrial environments.
Product Description
onsemi FDS8858CZ is an advanced Isolated PowerTrench 2 dual MOSFET integrating both Type N and Type P-channel transistors in a compact 8-pin SOIC surface mount package. This device supports a maximum continuous drain current of 8.6 A and a drain-source voltage rating of 30 V. Designed for efficient power switching applications, it features low on-resistance (21 mΩ) and enhancement-mode operation to optimize system performance.
These PowerTrench MOSFETs use shielded-gate technology to provide excellent charge balance, resulting in a significantly lower figure of merit (FOM) compared to previous generations, enhancing switching efficiency and power density in devices like synchronous rectifiers in AC/DC supplies.
The soft reverse recovery body diode reduces switching losses and may eliminate the need for snubber circuits or higher voltage-rated MOSFETs. The maximum gate-source voltage rating of ±25 V allows reliable control under various circuit conditions.
The FDS8858CZ operates reliably in a wide temperature range from -55°C up to 150°C, suitable for industrial and commercial use. Its compact dimensions (length 5 mm, width 4 mm, height 1.5 mm) and surface mount SOIC package enable flexible PCB layout with minimal space usage.
Applications include power management in consumer electronics, industrial controls, automotive auxiliary systems, and other medium power switching environments. The dual-element MOSFET arrangement enhances integrated circuit designs and efficiency.
Dual N-Channel and P-Channel enhancement mode MOSFETs. Low Rds(on) of 21 mΩ for improved conduction efficiency. Maximum continuous drain current: 8.6 A. Drain-source voltage rating of 30 V. Soft body diode for reduced switching losses.
Operating temperature range suitable for industrial applications (-55°C to 150°C). Compact SOIC 8-pin surface mount package.
Explore EnvMart for an extensive selection of onsemi semiconductor components suitable for a broad range of industrial, laboratory, automotive, and commercial electronic applications.
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Frequently Asked Questions
The maximum continuous drain current for this model is 8.6 A.
This model has a drain-source voltage rating of 30 V.
It features a low drain-source resistance of 21 mΩ, which helps reduce conduction losses.
The operating temperature range for this unit is from -55°C to 150°C.
It comes in a compact SOIC 8-pin surface mount package.
The soft body diode reduces switching losses and may eliminate the need for snubber circuits or higher voltage-rated MOSFETs.
The dimensions of this model are 5 mm in length, 4 mm in width, and 1.5 mm in height.
This unit integrates both Type N and Type P-channel transistors.
The maximum gate-source voltage rating is ±25 V.
It is suitable for power management in consumer electronics, industrial controls, automotive auxiliary systems, and other medium power switching environments.
The typical gate charge at Vgs is 17 nC.
The maximum power dissipation rating is 1.6 W.
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