onsemi PowerTrench Type P-Channel MOSFET 10 A, 20 V Enhancement Mode, 8-Pin SOIC FDS6575

onsemi FDS6575 PowerTrench Type P-Channel MOSFET is an enhancement-mode transistor offering a maximum continuous drain current of 10 A and maximum drain-source voltage of 20 V. This device is designed for surface mount applications utilizing an 8-pin SOIC package that ensures compactness and ease of assembly.

Equipped with PowerTrench technology, the MOSFET achieves increased system efficiency and improved power density through a combination of low gate charge and low reverse recovery charge. The shielded-gate structure provides excellent charge balance, resulting in a significantly lower figure of merit compared to previous generation devices.

Operating temperature range from -55°C up to 175°C allows for reliable performance in various industrial and commercial environments. Its typical gate charge at Vgs is 74 nC, with a maximum power dissipation rating of 2.5 W, making it suitable for power switching and management circuits.

The device features compact mechanical dimensions measuring 5 mm in length, 4 mm in width, and 1.5 mm in height. It also includes a soft reverse recovery body diode with a forward voltage of 1.2 V, facilitating efficient synchronous rectification without the need for additional snubber circuits.

This MOSFET is ideal for use in industrial electronic components, power management assemblies, and various semiconductor applications requiring a high-performance P-channel device.

Features a surface mount 8-pin SOIC package for compact integration. Offers low maximum drain-source resistance of 17 milliohms enhancing efficiency. Supports operation over a wide temperature range from -55°C to 175°C. Provides a maximum power dissipation of 2.5 W suitable for robust power switching.

Utilizes PowerTrench technology for optimized switching performance and system efficiency. Includes a shielded-gate structure to improve charge balance and reduce the figure of merit (FOM). Compact dimensions: 5 mm length, 4 mm width, and 1.5 mm height.

Body diode with soft reverse recovery eliminates the need for snubber circuits. Designed for use in industrial, power management, and electronic component applications. Explore other high-quality semiconductor devices by onsemi for various power and electronic component requirements in industrial and laboratory environments at EnvMart.