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onsemi PowerTrench Type P-Channel MOSFET, 8.2A Drain Current, 40V Voltage, 2.5W Power Dissipation, 8-Pin SOIC FDS4685

Category Discrete Semiconductor Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 1.5mm
Length 5mm
Model FDS4685
Width 4mm
Mount Type Surface
Series PowerTrench
Maximum Operating Temperature 150°C
Package Type SOIC
Minimum Operating Temperature -55°C
Pin Count 8
Channel Type Type P
Maximum Continuous Drain Current Id 8.2A
Maximum Drain Source Voltage Vds 40V
Maximum Drain Source Resistance Rds 27mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 2.5W
Typical Gate Charge Qg @ Vgs 19nC
Maximum Gate Source Voltage Vgs -20, +20V
Forward Voltage Vf -1.2V

Key Features

  • Optimized for increased system efficiency and power density.
  • Features low gate charge of 19nC for fast switching applications.
  • Surface mount SOIC package with 8 pins ensures compact design.
  • Maximum power dissipation of 2.5W supports moderate power loads.
  • Wide operating temperature range from -55°C to 150°C.
  • Low maximum drain-source resistance of 27mΩ reduces conduction losses.
  • Enhancement mode with PowerTrench technology enables improved performance.
  • Soft body diode reduces the need for snubber circuits in synchronous rectification.

Product Description

onsemi FDS4685 is a PowerTrench Type P-Channel MOSFET designed for power management and switching applications requiring continuous drain current up to 8.2A and maximum drain-source voltage of 40V. Its compact 8-pin SOIC surface mount package measures 5mm in length, 4mm in width, and 1.5mm in height, making it suitable for dense PCB layouts.

This MOSFET employs onsemi's advanced PowerTrench technology, providing low gate charge (19nC) and low drain-source resistance (27mΩ) to maximize efficiency and reduce power loss. Its enhancement mode operation and soft reverse recovery body diode facilitate fast switching and reduce EMI, enabling smooth synchronous rectification in AC/DC power supplies.

The device operates reliably across a wide temperature range from -55°C up to 150°C, making it suitable for demanding industrial, automotive, and consumer electronics environments. The maximum power dissipation rating of 2.5W supports applications with moderate power requirements.

Additional features include a maximum gate-source voltage of ±20V to withstand transient voltages and a typical forward voltage of -1.2V. While it does not conform to specific automotive standards, it is well suited for general purpose power switching tasks.

Package dimensions and pin count facilitate easy integration into surface-mounted circuits. The device does not carry explicit certifications or automotive approvals but benefits from onsemi's recognized manufacturing quality and reliability.

Optimized power switch with increased system efficiency. Low gate charge and soft diode ensure fast switching. Compact SOIC surface mount package facilitates PCB integration. Wide temperature range supports industrial and consumer electronics.

Ideal for AC/DC power supply synchronous rectification.

This onsemi PowerTrench MOSFET is ideal for electronics manufacturing, power management in industrial and commercial equipment, and laboratory test setups requiring efficient, reliable semiconductor switching components.

Explore more semiconductor components and MOSFETs at EnvMart for comprehensive power management solutions.

Explore more products in our Discrete Semiconductor category.

onsemi PowerTrench Type P-Channel MOSFET, 8.2A Drain Current, 40V Voltage, 2.5W Power Dissipation, 8-Pin SOIC FDS4685
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Frequently Asked Questions

The maximum continuous drain current for this model is 8.2A.

It has a maximum drain-source voltage rating of 40V.

This MOSFET measures 5mm in length, 4mm in width, and 1.5mm in height.

The typical gate charge for this model is 19nC.

The maximum power dissipation rating is 2.5W.

It operates reliably within a temperature range of -55°C to 150°C.

This model uses an 8-pin SOIC surface mount package.

The maximum drain-source resistance is 27mΩ.

It features a Type P channel configuration.

The maximum gate-source voltage is ±20V.

It is suitable for power management and switching applications, particularly in AC/DC power supplies for synchronous rectification.

This model does not carry explicit certifications or automotive approvals but is recognized for its manufacturing quality and reliability.

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