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onsemi P-Channel Enhancement MOSFET, 20 V, 13.5 A, 8-Pin SOIC FDS4465
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 1.5mm |
| Length | 5mm |
| Model | FDS4465 |
| Width | 4mm |
| Mount Type | Surface |
| Series | FDS |
| Maximum Operating Temperature | 175°C |
| Package Type | SOIC |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 13.5A |
| Maximum Drain Source Voltage Vds | 20V |
| Maximum Drain Source Resistance Rds | 9mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 2.5W |
| Typical Gate Charge Qg @ Vgs | 86nC |
| Maximum Gate Source Voltage Vgs | -8, +8V |
| Forward Voltage Vf | -1.2V |
Key Features
- This MOSFET features a low maximum drain-source resistance of 9 mΩ for efficient conduction.
- Maximum continuous drain current of 13.5 A suits medium power applications.
- Surface-mount SOIC package ensures compact PCB integration.
- Wide operating temperature range from -55°C to 175°C supports harsh environments.
- Typical gate charge of 86 nC enables fast switching performance.
- Maximum gate-source voltage of ±8 V compatible with standard control circuits.
- Package dimensions are 5 mm length, 4 mm width, and 1.5 mm height for space-saving design.
Product Description
onsemi FDS4465 is a P-Channel Enhancement MOSFET designed for power management and switching applications requiring a continuous drain current of 13.5 A and operating at a maximum drain-source voltage of 20 V. Packaged in an 8-pin SOIC surface-mount configuration, it offers low conduction losses with a maximum drain-source resistance of 9 mΩ, making it suitable for efficient power control circuits.
This device can dissipate up to 2.5 W of power and supports a wide operating temperature range from -55°C to 175°C, providing reliability in harsh environments. The typical gate charge of 86 nC ensures rapid switching for high-frequency applications, while the maximum gate-source voltage rating of ±8 V accommodates standard drive voltages.
With physical dimensions of 5 mm length, 4 mm width, and 1.5 mm height, the FDS4465 is compact and easily integrated into densely packed electronic assemblies. Though it lacks specific automotive certifications, its robust construction allows use in various industrial and commercial electronics.
Applications include automotive electronics, power management in industrial machinery, consumer electronics, and other fields requiring durable MOSFET components for switching and amplification. Onsemi’s comprehensive semiconductor solutions ensure quality and reliability for demanding use cases.
This MOSFET features a low maximum drain-source resistance of 9 mΩ for efficient conduction. Maximum continuous drain current of 13.5 A suits medium power applications. Surface-mount SOIC package ensures compact PCB integration.
Wide operating temperature range from -55°C to 175°C supports harsh environments. Typical gate charge of 86 nC enables fast switching performance. Maximum gate-source voltage of ±8V compatible with standard control circuits.
Package dimensions are 5 mm length, 4 mm width, and 1.5 mm height for space-saving design. Explore the extensive onsemi MOSFET range and other semiconductor products on EnvMart for your electronics design requirements.
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Frequently Asked Questions
The maximum continuous drain current of the FDS4465 is 13.5 A, making it suitable for medium power applications.
This MOSFET operates at a maximum drain-source voltage of 20 V.
The FDS4465 features a maximum drain-source resistance of 9 mΩ, which allows for efficient conduction.
The typical gate charge for the FDS4465 is 86 nC, enabling fast switching performance.
The package dimensions of this MOSFET are 5 mm in length, 4 mm in width, and 1.5 mm in height.
The FDS4465 supports a wide operating temperature range from -55°C to 175°C, suitable for harsh environments.
This model is packaged in an 8-pin SOIC surface-mount configuration, allowing for compact PCB integration.
The maximum power dissipation for this MOSFET is 2.5 W.
The maximum gate-source voltage rating for the FDS4465 is ±8 V, which is compatible with standard control circuits.
This MOSFET is suitable for applications in automotive electronics, power management in industrial machinery, and consumer electronics.
The FDS4465 features a P-Channel Enhancement mode, which is designed for power management and switching applications.
The country of origin for the FDS4465 is India.
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