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onsemi PowerTrench Type P-Channel MOSFET Surface Mount 1.3 A 30 V 3-Pin SOT-23 FDN352AP

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onsemi PowerTrench Type P-Channel MOSFET Surface Mount 1.3 A 30 V 3-Pin SOT-23 FDN352AP

Name: onsemi PowerTrench Type P-Channel MOSFET Surface Mount 1.3 A 30 V 3-Pin SOT-23 FDN352AP
Brand: onsemi
SKU: 207532
Price: 0.28 USD
Availability: InStock

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Category MOSFET Brand onsemi Condition New

Specifications

Country of Origin	India
Brand	onsemi
Height	940μm
Length	2.92mm
Model	FDN352AP
Width	1.4mm
Mount Type	Surface
Series	PowerTrench
Maximum Operating Temperature	150°C
Package Type	SOT-23
Minimum Operating Temperature	-55°C
Pin Count	3
Channel Type	Type P
Maximum Continuous Drain Current Id	1.3A
Maximum Drain Source Voltage Vds	30V
Maximum Drain Source Resistance Rds	180mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	500mW
Typical Gate Charge Qg @ Vgs	1.4nC
Maximum Gate Source Voltage Vgs	-25, +25V
Forward Voltage Vf	-1.2V

Key Features

PowerTrench technology offers enhanced efficiency and reduced switching losses.
Maximum continuous drain current of 1.3 amperes suitable for low power applications.
Low maximum drain-source resistance of 180 milliohms for better conduction.
Compact surface mount SOT-23 package with 3 pins enables space saving on PCB.
Operating temperature range from -55°C to 150°C for reliable performance.
Maximum power dissipation rated at 500 milliwatts for thermal management.
Typical gate charge of 1.4 nano-Coulombs enabling fast switching.
Maximum gate-source voltage ±25 V allows robust drive conditions.

Product Description

onsemi FDN352AP is a PowerTrench Type P-Channel MOSFET optimized for surface mount applications requiring efficient power switching. Packaged in a 3-pin SOT-23 format, it supports a continuous drain current of 1.3 A and a maximum drain-source voltage of 30 V, making it suitable for compact electronic circuits and power management tasks.

This MOSFET features a low on-resistance of 180 milliohms, contributing to low conduction losses and higher overall system efficiency. The PowerTrench technology combines small gate charge and a soft reverse recovery diode, enhancing switching speed and reducing electromagnetic interference, which is essential in AC/DC power supply design and synchronous rectification.

Designed with an enhancement mode channel, the device guarantees high reliability over its temperature range from -55°C to 150°C. Its maximum power dissipation rating of 500 milliwatts facilitates thermal management in dense circuit layouts.

The FDN352AP can be deployed in a variety of industrial and electronic sectors including consumer electronics, industrial automation, and telecommunications where compact, efficient, and reliable MOSFETs are required. It supports robust operating conditions with a maximum gate-source voltage rating of ±25 V, ensuring stable drive from various control ICs.

PowerTrench technology ensures low gate charge and fast switching. Compact 3-pin SOT-23 package ideal for space-constrained designs. Low on-resistance for better conduction efficiency. Wide operating temperature range from -55°C to 150°C.

High power dissipation supports robust applications. Enhancement mode operation for efficient switching. Suitable for industrial, telecommunications, and consumer electronics.

Choose the onsemi FDN352AP PowerTrench P-Channel MOSFET for applications demanding high efficiency, reliability, and compactness. Explore more options in our Semiconductor MOSFET category for diverse power switching solutions on EnvMart.