onsemi N-Channel MOSFET 115 mA 60 V Enhancement Mode 3-Pin SOT-23 2N7002

onsemi 2N7002 N-Channel MOSFET 115 mA 60 V Enhancement Mode 3-Pin SOT-23 transistor is designed using advanced DMOS technology to provide low on-resistance and high-speed switching with rugged and reliable performance. This device is ideal for use in industrial, automotive, and general electronic circuit applications requiring efficient switching and amplification.

This enhancement mode N-channel MOSFET features a maximum continuous drain current of 115 mA and can withstand a drain-source voltage up to 60 V, suited for low to medium power circuit needs. Packaged in a compact 3-pin SOT-23 surface-mount form factor, it facilitates easy integration into modern printed circuit boards with limited space.

With a maximum power dissipation of 200 mW and operation over a temperature range from -55°C to 150°C, the 2N7002 ensures dependable performance even under varied environmental conditions. Its typical gate charge of 223 nC at standard gate-source voltages enables efficient switching with minimal delay, while the maximum gate-source voltage ratings provide robust protection for the gate oxide during operation.

Physical dimensions of 2.92 mm in length, 1.3 mm in width, and 930 μm in height allow for compact designs without sacrificing functionality. This MOSFET complies with stringent automotive standards AEC-Q100, AEC-Q200, and AEC-Q101, making it suitable for automotive electronics and other demanding applications.

This product is manufactured in China under strict quality controls, ensuring consistent device performance. It is an essential component for electronics engineers focusing on power management, automotive circuits, and discrete semiconductor applications.

Enhancement Mode N-Channel MOSFET with DMOS technology for low resistance and fast switching. Maximum drain current 115 mA and maximum drain-source voltage 60 V. Surface mount package SOT-23 with 3 pins ideal for compact PCB layouts.

Thermal operating range from -55°C to 150°C for versatile environmental use. Automotive compliant with AEC-Q100, AEC-Q200, and AEC-Q101 standards. Typical gate charge 223 nC ensuring efficient gate control and switching.

Maximum power dissipation rating of 200 mW for moderate power handling. Compact physical dimensions suitable for modern electronics design. Explore more electronic components and MOSFETs at EnvMart for all industrial, automotive, and laboratory applications.