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DiodesZetex NPN Bipolar Transistor 6A 60V 4-Pin SOT-223 ZXTN2010GTA

Category Bipolar Transistors Brand DiodesZetex Condition New

Specifications

Country of Origin India
Brand DiodesZetex
Height 1.65mm
Length 6.55mm
Model ZXTN2010GTA
Width 7.1mm
Mount Type Surface
Series ZXTN2010G
Maximum Operating Temperature 150°C
Package Type SOT-223
Minimum Operating Temperature -55°C
Pin Count 4
Maximum Collector Emitter Voltage Vceo 60V
Minimum DC Current Gain hFE 20
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 7V
Maximum Collector Base Voltage VCBO 150V
Automotive Standard AEC-Q101
Maximum Power Dissipation Pd 3W
Maximum DC Collector Current Idc 6A
Transistor Configuration Single
Maximum Transition Frequency ft 130MHz

Key Features

  • This NPN transistor provides a maximum DC collector current of 6 amperes.
  • Maximum collector-emitter voltage rating is 60 volts ensuring high voltage operation.
  • Packaged in a compact 4-pin SOT-223 surface mount for easy PCB integration.
  • Transistor features a maximum power dissipation of 3 watts for efficient thermal management.
  • The gain (hFE) minimum is 20 ensuring reliable amplification performance.
  • Operates over a temperature range from -55°C to 150°C suitable for various industrial applications.
  • Maximum transition frequency is 130 MHz facilitating high frequency switching capabilities.
  • Complies with Automotive Standard AEC-Q101, assuring automotive-grade reliability.

Product Description

DiodesZetex ZXTN2010GTA is a general-purpose NPN bipolar transistor designed for a variety of electronic and power switching applications. It features a maximum DC collector current of 6 amperes and a collector-emitter voltage rating of 60 volts, making it suitable for medium-power circuits requiring efficient switching and amplification.

The device is housed in a 4-pin SOT-223 surface mount package, allowing for compact PCB designs and reliable mount integrity. Its maximum power dissipation of 3 watts allows for stable operation under thermal stress, while the minimum DC current gain (hFE) of 20 ensures good amplification characteristics for signal processing needs.

With a frequency transition capability up to 130 MHz, this transistor is well-suited for high-frequency switching and amplification tasks in telecommunications, automotive electronics, and general industrial control systems. The transistor operates reliably across a wide temperature range from -55°C to 150°C, meeting requirements for harsh operating environments.

Additional features include compliance with the automotive AEC-Q101 standard, confirming its suitability for use in automotive applications demanding high reliability and quality standards. The compact physical dimensions (6.55 mm length, 7.1 mm width, and 1.65 mm height) make it ideal for high-density electronic assemblies.

The transistor supports a maximum collector base voltage (VCBO) of 150 V, providing robustness against voltage spikes. Maximum emitter-base voltage (VEBO) is 7 V, protecting internal junctions during operation. The 4-pin configuration facilitates versatile circuit design possibilities and surface mounting.

Surface mount mount type optimizes automated assembly process efficiency.

This component is commonly used in industrial power management, automotive control circuits, communication devices, and consumer electronics for amplification, switching, and general purpose transistor functions. It is an essential part for engineers and designers aiming for dependable performance and long-term operational stability.

Explore the full range of Bipolar Transistors and electronic components available at EnvMart for your specific industrial and commercial requirements.

DiodesZetex NPN Bipolar Transistor 6A 60V 4-Pin SOT-223 ZXTN2010GTA
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