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DiodesZetex Dual NPN and PNP Bipolar Transistor 2 A 45 V Surface Mount, 8 Pin ZDT6790TA

Category Bipolar Transistors Brand DiodesZetex Condition New

Specifications

Country of Origin Germany
Brand DiodesZetex
Height 1.7mm
Length 6.7mm
Model ZDT6790TA
Width 7.3mm
Mount Type Surface
Series ZDTX
Maximum Operating Temperature 150°C
Package Type Surface Mount
Minimum Operating Temperature -55°C
Pin Count 8
Maximum Collector Emitter Voltage Vceo 45V
Minimum DC Current Gain hFE 150
Transistor Polarity NPN + PNP
Maximum Emitter Base Voltage VEBO 5V
Maximum Collector Base Voltage VCBO 45V
Automotive Standard AEC-Q101
Maximum Power Dissipation Pd 2.75W
Maximum DC Collector Current Idc 2A
Transistor Configuration Isolated
Maximum Transition Frequency ft 150MHz

Key Features

  • Supports maximum DC collector current of 2 A.
  • Operates with maximum collector-emitter voltage of 45 V.
  • 8-pin surface mount package suitable for compact circuit designs.
  • Transistor configuration is isolated for stable operation.
  • Maximum power dissipation is 2.75 W ensuring efficient heat management.
  • Minimum DC current gain (hFE) of 150 for amplification efficiency.
  • Wide operating temperature range from -55°C to 150°C for reliability.
  • Maximum transition frequency up to 150 MHz supports high-speed applications.

Product Description

DiodesZetex ZDT6790TA dual NPN and PNP bipolar transistor is designed for surface mount applications where a compact, high-performance switching or amplification device is required. It supports a maximum DC collector current of 2 A and can withstand voltages up to 45 V between collector and emitter terminals. The device features an 8-pin package suitable for modern PCB mounting technologies.

This transistor is isolated in configuration, ensuring stable and reliable switching performance across a wide operating temperature range from -55°C to 150°C. With a power dissipation rating of 2.75 W, it efficiently manages thermal loads during operation.

The device exhibits a minimum DC current gain of 150, contributing to effective signal amplification, and a maximum transition frequency of 150 MHz, suitable for high-frequency electronic circuits and automotive applications. It meets the stringent AEC-Q101 automotive standard, confirming its robustness and reliability in harsh environments.

Physical dimensions are compact with measurements of 6.7 mm in length, 7.3 mm in width, and 1.7 mm in height, facilitating use in densely packed circuit boards. The ZDT6790TA transistor is manufactured in Germany assuring high-quality engineering standards.

Supports maximum DC collector current of 2 A. Operates with maximum collector-emitter voltage of 45 V. 8-pin surface mount package suitable for compact circuit designs. Transistor configuration is isolated for stable operation.

Maximum power dissipation is 2.75 W ensuring efficient heat management. Minimum DC current gain (hFE) of 150 for amplification efficiency. Wide operating temperature range from -55°C to 150°C for reliability. Maximum transition frequency up to 150 MHz supports high-speed applications.

Compliant with AEC-Q101 automotive standard for enhanced quality. Compact dimensions with length 6.7 mm, width 7.3 mm, and height 1.7 mm.

Ideal for industrial electronic circuits, automotive control systems, and power amplification applications. Explore the comprehensive range of Bipolar Transistors available on EnvMart for all your electronic component needs.

DiodesZetex Dual NPN and PNP Bipolar Transistor 2 A 45 V Surface Mount, 8 Pin ZDT6790TA
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Frequently Asked Questions

The maximum DC collector current for this model is 2 A.

It can withstand a maximum collector-emitter voltage of 45 V.

This model comes in an 8-pin surface mount package suitable for compact circuit designs.

The minimum DC current gain (hFE) is 150, which contributes to its amplification efficiency.

It operates within a wide temperature range from -55°C to 150°C.

The maximum power dissipation is rated at 2.75 W, ensuring efficient heat management.

The maximum transition frequency is up to 150 MHz, making it suitable for high-speed applications.

The dimensions are 6.7 mm in length, 7.3 mm in width, and 1.7 mm in height.

Yes, it meets the AEC-Q101 automotive standard, confirming its robustness in harsh environments.

It features an isolated transistor configuration for stable operation.

The maximum emitter-base voltage (VEBO) is 5 V.

This model is manufactured in Germany, ensuring high-quality engineering standards.

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