Infineon ISC N-Channel MOSFET 170 A 40 V 8-Pin TDSON-8 FL ISC019N04NM5ATMA1

Infineon ISC019N04NM5ATMA1 is an N-Channel MOSFET optimized for power electronic applications requiring high current handling and low on-resistance. It features a 40 V drain-source breakdown voltage and continuous drain current rating of 170 A while housed in a compact 8-pin TDSON-8 FL surface mount package. This transistor is engineered for applications including battery-powered devices and low voltage motor drives where efficient conduction and switching performance are critical.

The device exhibits a maximum drain-source resistance of only 1.7 milliohms, minimizing power loss and thermal generation during operation. Its typical gate charge of 67 nanocoulombs supports swift switching, which helps reduce switching losses at higher frequencies. Its gate-source voltage maximum rating of 20 V enables reliable gate drive control to prevent damage and optimize switching.

Designed for industrial-grade reliability, this MOSFET accommodates a wide temperature range from -55°C to 175°C junction temperature and undergoes 100% avalanche testing to ensure robustness. The higher threshold voltage design provides additional immunity from false turn-on events caused by electrical noise, making it suitable for demanding environments.

Manufactured using lead-free plating and compliant with RoHS and halogen-free standards, this transistor aligns with environmental safety requirements. Its superior thermal resistance further enhances device longevity and stability in power electronics applications.

Key applications include battery management systems, low voltage motor drives, and other electronic devices that demand efficient power switching and high current capability. The product offers a benchmark solution balancing robustness, efficiency, and compact form factor in semiconductor discrete components.

Features an 8-pin TDSON-8 FL surface mount package for compact PCB integration. Offers low on-resistance of 1.7 milliohms for efficient conduction. Maximum gate-source voltage is rated at 20 V ensuring robust gate control.

Typical gate charge of 67 nanocoulombs enables fast switching performance. Supports maximum power dissipation of 115 W for high power applications. Operates reliably from -55°C to 175°C junction temperature for harsh environments.

Designed with enhanced immunity to false turn-on in noisy environments due to higher threshold voltage. Suitable for battery-powered applications and low voltage motor drives. Manufactured with lead-free and RoHS and halogen-free compliant processes.

100% avalanche tested ensuring superior robustness and reliability. Explore more Infineon power semiconductors and electronic components at EnvMart for industrial, automotive, and laboratory applications.