Infineon ISC N-Channel MOSFET 121A 40V 8-Pin TDSON-8 FL ISC028N04NM5ATMA1

Infineon ISC028N04NM5ATMA1 is a high-performance N-Channel MOSFET designed for demanding electronic and power management applications. Operating at a continuous drain current of 121A and a maximum drain source voltage of 40V, this transistor offers efficient power conduction and low losses, ideal for modern electronic systems.

The device is housed in a compact TDSON-8 FL surface-mount package with dimensions of 3.8mm length, 1.1mm width, and 4.4mm height, enabling space-saving PCB designs. With a low maximum drain source resistance of only 2.8 milliohms and a typical gate charge of 38nC, it achieves reduced switching losses and improved thermal performance, supporting up to 75W power dissipation.

Designed to withstand harsh operational conditions, this MOSFET supports a wide temperature range from -55°C to 175°C and includes 100% avalanche testing for added reliability. Its maximum gate source voltage rating of ±20V ensures operational robustness against voltage spikes and noise, making it suitable for battery-powered applications and low-voltage motor drives.

Additional features include lead-free plating, halogen-free materials compliant with IEC61249-2-21 standards, and immunity to false turn-on from noisy environments due to its higher threshold voltage design. The reduced QGD/QGS gate charge ratios further help minimize gate voltage spikes, enhancing device robustness for high-frequency switching.

This MOSFET is ideal for industrial, automotive, and commercial electronics, especially applicable in power management, motor control, and battery-powered systems requiring reliable and efficient switching performance. It complies with environmental and safety standards, making it suitable for modern electronic manufacturing processes.

Supports a maximum continuous drain current of 121A. Features a low maximum drain source resistance of 2.8 milliohms for efficient conduction. Operates safely up to a maximum temperature of 175°C. Equipped with a low typical gate charge of 38nC to reduce switching losses.

Compact dimensions: Length 3.8mm, Width 1.1mm, Height 4.4mm. Surface mount design suitable for automated PCB assembly. Maximum gate source voltage rating of ±20V ensures robust operation. Tested to withstand 100% avalanche events, enhancing durability.

Lead and halogen free construction meets environmental compliance standards. Suitable for high-frequency switching applications and battery-powered LV motor drives. Explore more Infineon semiconductor components and MOSFET models in the Electronics & Electricals category on EnvMart.