Vishay TrenchFET Type P-Channel MOSFET, 8 A, 20 V Enhancement Mode, 6-Pin TSOP SI3493DDV-T1-GE3

Vishay SI3493DDV-T1-GE3 is a TrenchFET Type P-Channel MOSFET designed for efficient electrical power management in electronic circuits. Featuring an 8 ampere maximum continuous drain current and a drain-source voltage of 20 volts, it supports enhancement mode operation with low on-resistance characteristics for superior switching performance. The device is housed in a 6-pin TSOP surface mount package with compact dimensions of 3.1 mm length, 1.7 mm width, and 1 mm height, facilitating space-saving PCB layouts.

This MOSFET offers a maximum drain-source resistance (Rds) of 51 milliohms, contributing to reduced conduction losses and enhanced system efficiency. It features a maximum power dissipation rating of 3.6 watts and operates reliably across a wide temperature range from -55 degrees Celsius to 150 degrees Celsius, making it suitable for demanding industrial, commercial, and automotive electronic applications.

The typical gate charge at Vgs is 34.8 nanocoulombs, enabling rapid switching speeds crucial for modern power electronics. The device supports a maximum gate-source voltage of negative 8 to positive 8 volts, ensuring robust gate control without damage risk. Its forward voltage drop is about -1.2 volts, optimizing the MOSFET for low-loss operation in circuits requiring efficient power conversion and regulation.

This product targets use cases in industrial electronics, power supplies, DC-DC converters, battery management systems, and motor controls, where compact size and superior electrical performance are critical. Its TSOP package and TrenchFET Gen IV technology deliver advanced electrical switching capability combined with durable mechanical design. The MOSFET's precise specifications help engineers achieve high efficiency and reliability in sophisticated electronic equipment.

Features TrenchFET Gen IV technology for improved efficiency. Surface mount TSOP package with 6 pins ensures compact PCB design. Offers a low maximum drain-source resistance of 51 milliohms. Supports a wide operating temperature range from -55°C to 150°C.

Maximum power dissipation rated at 3.6 watts for reliable thermal performance. Typical gate charge of 34.8 nC enabling fast switching. Enhancement mode with a maximum gate-source voltage of ±8 volts. Compact dimensions: length 3.1 mm, width 1.7 mm, height 1 mm.

Forward voltage drop of -1.2 volts suitable for power-efficient circuits. Explore the extensive range of MOSFET components with Vishay and others at EnvMart for your industrial, electronic design, and manufacturing needs.