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ams OSRAM Radial T1 50 ° Infrared Phototransistor Through Hole 2-Pin 3 mm (T-1) Package SFH 310 FA-2/3
Specifications
| Country of Origin | India |
|---|---|
| Diameter | 2.9mm |
| Brand | ams OSRAM |
| Height | 4.8mm |
| Length | 3.4mm |
| Model | SFH 310 FA-2/3 |
| Width | 3.4mm |
| Mount Type | Through Hole |
| Series | Radial T1 |
| Maximum Operating Temperature | 100°C |
| Package Type | 3 mm (T-1) |
| Minimum Operating Temperature | -40°C |
| Number Of Channels | 1 |
| Standards/Approvals | RoHS |
| Number of Pins | 2 |
| Typical Fall Time | 12μs |
| Peak Wavelength | 890nm |
| Spectrums Detected | Infrared |
| Angle of Half Sensitivity | 50 ° |
| Collector Current | 50mA |
| Maximum Light Current | 4800μA |
| Maximum Dark Current | 50nA |
| Collector Emitter Voltage | 70V |
Key Features
- This phototransistor detects infrared light at a peak wavelength of 890 nm.
- It features a typical rise and fall time of 12 microseconds for fast switching.
- The device supports a maximum collector current of 50 mA and maximum light current of 4800 µA.
- Temperature range is wide, from -40°C to 100°C for robust operation.
- Its half sensitivity angle is 50 degrees, allowing for precise directional light detection.
- The component complies with RoHS standards ensuring environmental safety.
- Package dimensions include a height of 4.8 mm and width and length of 3.4 mm.
- Collector emitter voltage rating is up to 70 V.
Product Description
ams OSRAM SFH 310 FA-2/3 is an advanced infrared phototransistor, housed in a standard 3 mm (T-1) radial package, built for reliable through-hole mounting with two pins. This NPN silicon phototransistor is designed for applications requiring precise detection of infrared light, especially suitable in photointerrupters, industrial electronics, and control or drive circuits.
This phototransistor operates optimally at a peak wavelength of 890 nm with a half sensitivity angle of 50 degrees, enabling effective directional detection of infrared light. It features rapid switching capabilities with a typical rise and fall time of 12 microseconds, making it highly responsive in dynamic applications.
The device supports a maximum collector current of 50 mA and maximum light current of 4800 microamperes, enabling efficient signal amplification while maintaining low dark current of 50 nA. Operating temperature range spans from -40°C to 100°C, offering versatility for harsh industrial environments.
The package dimensions of height 4.8 mm, length 3.4 mm, width 3.4 mm, and diameter 2.9 mm conform to industry-standard radial T1 packaging, ensuring compatibility with existing assembly lines and PCBs. Its collector emitter voltage is rated for up to 70 volts, providing robust electrical tolerance for various electronic circuits.
It is not specifically designed for automotive standards but is well suited for industrial, laboratory, construction, and commercial electronics applications requiring reliable infrared sensing components.
This phototransistor detects infrared light at a peak wavelength of 890 nm. It features a typical rise and fall time of 12 microseconds for fast switching. The device supports a maximum collector current of 50 mA and maximum light current of 4800 µA.
Temperature range is wide, from -40°C to 100°C for robust operation. Its half sensitivity angle is 50 degrees, allowing for precise directional light detection. The component complies with RoHS standards ensuring environmental safety.
Package dimensions include a height of 4.8 mm and width and length of 3.4 mm. Collector emitter voltage rating is up to 70 V. Explore more advanced Phototransistors and infrared sensors at EnvMart to enhance your electronics manufacturing and design projects.
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Frequently Asked Questions
The phototransistor detects infrared light at a peak wavelength of 890 nm.
It supports a maximum collector current of 50 mA.
The typical rise and fall time is 12 microseconds, allowing for fast switching.
The operating temperature range spans from -40°C to 100°C, making it suitable for various environments.
The package dimensions are height 4.8 mm, length 3.4 mm, and width 3.4 mm, with a diameter of 2.9 mm.
The collector emitter voltage rating is up to 70 V.
The half sensitivity angle is 50 degrees, allowing for precise directional light detection.
Yes, it complies with RoHS standards, ensuring environmental safety.
This phototransistor has 2 pins for through-hole mounting.
The maximum light current is 4800 µA.
It uses a through-hole mounting type, suitable for standard assembly processes.
It is suitable for applications requiring precise detection of infrared light, such as photointerrupters and control circuits.
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