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Vishay 400 V 320 A Diode Switching 3-Pin TO-244 VS-HFA320NJ40CPBF
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Height | 17.5mm |
| Length | 93mm |
| Model | VS-HFA320NJ40CPBF |
| Width | 21mm |
| Mount Type | Panel |
| Series | VSX |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-244 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Maximum Continuous Forward Current If | 320A |
| Peak Reverse Repetitive Voltage Vrrm | 400V |
| Diode Configuration | Common Cathode |
| Rectifier Type | Switching |
| Peak Reverse Current Ir | 12μA |
| Peak Non-Repetitive Forward Surge Current Ifsm | 1.2kA |
| Maximum Forward Voltage Vf | 1.55V |
| Peak Reverse Recovery Time trr | 140ns |
Key Features
- Features ultrafast recovery time for efficient switching performance.
- Constructed with proprietary Schottky barrier technology for soft and fast recovery.
- Common cathode diode configuration for flexible circuit integration.
- Supports maximum continuous forward current of 320 A and peak reverse repetitive voltage of 400 V.
- Low peak reverse current of 12 microamperes minimizing leakage losses.
- Package type is TO-244 with 3-pin mounting suitable for panel installation.
- Maximum operating temperature of 150 °C ensures durability in demanding conditions.
- Compact dimensions with length 93 mm, width 21 mm, height 17.5 mm.
Product Description
Vishay VS-HFA320NJ40CPBF is a switching diode housed in a 3-pin TO-244 package, engineered to support robust power applications requiring 400 V peak reverse voltage and 320 A continuous forward current rating.
This diode utilizes HEXFRED® ultrafast recovery technology combined with a proprietary Schottky barrier inner structure, enabling soft and fast recovery characteristics at any rate of current change. It is specifically designed to work as a reliable companion diode for IGBTs and MOSFETs in industrial automation, power conversion, and electronic manufacturing environments.
The device delivers low peak reverse current of 12 μA and low forward voltage of 1.55 V, optimizing efficiency and minimizing power dissipation in high-frequency switching circuits. Its withstands high surge currents up to 1.2 kA providing safe operation during electrical transients.
Operating temperature range from -55 °C to 150 °C and panel mount type package ensures adaptability in challenging thermal and mechanical conditions. With physical dimensions of 93 mm length, 21 mm width, and 17.5 mm height, this diode fits compact designs without sacrificing performance.
Features ultrafast recovery time for efficient switching performance. Constructed with proprietary Schottky barrier technology for soft and fast recovery. Common cathode diode configuration for flexible circuit integration.
Supports maximum continuous forward current of 320 A and peak reverse repetitive voltage of 400 V. Low peak reverse current of 12 microamperes minimizing leakage losses. Package type is TO-244 with 3-pin mounting suitable for panel installation.
Maximum operating temperature of 150 °C ensures durability in demanding conditions. Compact dimensions with length 93 mm, width 21 mm, height 17.5 mm. Peak non-repetitive forward surge current up to 1.2 kA for transient robustness.
Designed to reduce electromagnetic interference and power losses in switching circuits.
This diode is ideal for industrial, electronic manufacturing, power supply, automotive electronics, and renewable energy systems where efficient and reliable switching diode performance is critical.
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Frequently Asked Questions
The maximum continuous forward current rating of this diode is 320 A.
This model supports a peak reverse repetitive voltage of 400 V.
The dimensions of this diode are 93 mm in length, 21 mm in width, and 17.5 mm in height.
The diode is housed in a TO-244 package and has a 3-pin configuration.
The peak reverse current of this diode is 12 μA.
The operating temperature range for this diode is from -55 °C to 150 °C.
This model uses a common cathode diode configuration.
The peak non-repetitive forward surge current rating is up to 1.2 kA.
The maximum forward voltage for this diode is 1.55 V.
This diode is constructed with proprietary Schottky barrier technology, enabling soft and fast recovery characteristics.
This diode is suitable for industrial automation, power conversion, and electronic manufacturing environments.
It minimizes power dissipation through low forward voltage of 1.55 V and low peak reverse current of 12 μA, optimizing efficiency.
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