Infineon HEXFET N-Channel MOSFET 210A 75V Enhancement Mode TO-220 3-Pin IRFB3077PBF

Infineon IRFB3077PBF HEXFET N-Channel MOSFET is a high-performance power semiconductor device designed for industrial, electronic, and power management applications. This device operates with a maximum continuous drain current of 210A and a drain-source voltage rating of 75V. Packaged in a TO-220AB 3-pin through-hole format, it offers optimal thermal management and easy PCB mounting.

Constructed using Silicon MOSFET technology in enhancement mode, this component achieves a low RDS(on) of 3mΩ, significantly minimizing power losses and heat generation during operation. This ensures enhanced efficiency and longevity in demanding power electronics circuits.

The MOSFET can dissipate a maximum power of 370W, making it suitable for high power supply and switching devices. It is capable of working reliably within a broad temperature range from -55°C to 175°C, addressing diverse environmental conditions including industrial automation and power supply units.

The device features a typical gate charge of 160nC at specified gate-source voltages, facilitating high-speed switching without compromising control precision. Its rugged design improves avalanche and dynamic dv/dt tolerance, ensuring safer operation under transient conditions.

This MOSFET is ideal for use in synchronous rectification systems, uninterruptible power supply setups, and applications requiring high-frequency hard switching. Its compact TO-220AB package with dimensions approximately 10.66mm length, 4.82mm width, and 9.02mm height makes installation straightforward in various electrical and mechanical power systems.

Features a TO-220 3-pin package designed for effective thermal dissipation and through-hole mounting. Operates in enhancement mode with a low drain-source resistance of 3mΩ for efficient power management. Supports maximum power dissipation up to 370W, enabling robust performance under demanding conditions.

Wide operating temperature range from -55°C to +175°C suitable for various industrial environments. Includes a typical gate charge of 160nC to optimize switching speeds and device control. Maintains high reliability through improved avalanche and dynamic dv/dt ruggedness features.

Compatible with synchronous rectification, uninterruptible power supplies, and industrial automation circuits.

This product is a reliable component choice for engineers and designers working in power electronics, construction of power supplies, and automation control systems. Browse our Electronics & Electricals category for additional semiconductor devices and components from top brands.