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Vishay IRF830A N-Channel Power MOSFET, 5 A, 500 V Enhancement Mode, 3-Pin TO-263 IRF830ASPBF
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Height | 4.83mm |
| Length | 10.67mm |
| Model | IRF830ASPBF |
| Width | 9.65mm |
| Mount Type | Surface |
| Series | IRF830A |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-263 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 5A |
| Maximum Drain Source Voltage Vds | 500V |
| Maximum Drain Source Resistance Rds | 1.4Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 3.1W |
| Typical Gate Charge Qg @ Vgs | 24nC |
| Maximum Gate Source Voltage Vgs | -30, +30V |
| Forward Voltage Vf | 1.5V |
Key Features
- Operates in enhancement mode with a gate-source voltage range of -30 V to +30 V.
- Maximum power dissipation of 3.1 W ensures reliable operation under load.
- Typical gate charge is 24 nC at Vgs, enabling efficient switching.
- Measured forward voltage is 1.5 V, suitable for power applications.
- Operating temperature range from -55°C to 150°C allows for versatile environmental use.
- Surface mount device designed for industrial power switching applications.
- Meets IEC 61249-2-21 and RoHS 2002/95/EC standards for quality and compliance.
Product Description
Vishay IRF830ASPBF is a high-performance N-Channel Power MOSFET designed for industrial and electronic applications requiring robust switching capabilities. Featuring a maximum continuous drain current of 5 A and a drain-source voltage rating of 500 V, this device operates in enhancement mode and is housed in a compact 3-pin TO-263 surface mount package.
The MOSFET provides excellent switching efficiency with a typical gate charge of 24 nC at gate-source voltage and a forward voltage of 1.5 V. It supports maximum power dissipation of 3.1 W, enabling reliable performance under sustained load conditions.
Dimensioned at 10.67 mm in length, 9.65 mm in width, and 4.83 mm in height, the IRF830ASPBF is suitable for incorporation into dense circuit layouts. It supports operating temperatures from -55°C to 150°C, making it adequate for a wide range of environments including industrial, manufacturing, HVAC controls, and power management systems.
This transistor complies with IEC 61249-2-21 and RoHS 2002/95/EC environmental standards, ensuring quality and regulatory compliance for modern electronic designs. The surface mount design allows for efficient PCB assembly and integration into automated production lines.
Operates in enhancement mode with a gate-source voltage of -30 V to +30 V. Maximum continuous drain current of 5 A makes it suitable for moderate power applications. Maximum drain-source voltage of 500 V allows usage in high voltage circuits.
Compact TO-263 package with 3 pins facilitates surface mounting. Maximum power dissipation of 3.1 W supports steady-state thermal conditions. Wide temperature range from -55°C to +150°C ensures versatility. Typical gate charge of 24 nC at Vgs promotes efficient switching.
Compliant with IEC 61249-2-21 and RoHS regulations for environmental safety.
This Vishay MOSFET is an ideal choice for power switching applications in electronics manufacturing, industrial control systems, HVAC units, and power management equipment. Browse the Electronics & Electricals category on EnvMart for more quality semiconductor devices and electronic components.
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Frequently Asked Questions
The maximum continuous drain current of the Vishay IRF830ASPBF is 5 A.
This model has a maximum drain-source voltage rating of 500 V.
The typical gate charge at gate-source voltage is 24 nC.
The maximum power dissipation is 3.1 W, allowing for reliable operation under load.
It operates within a temperature range from -55°C to 150°C.
The measured forward voltage of this MOSFET is 1.5 V, suitable for power applications.
This model is housed in a compact 3-pin TO-263 surface mount package.
The dimensions are 10.67 mm in length, 9.65 mm in width, and 4.83 mm in height.
The maximum gate-source voltage for this MOSFET is -30 V to +30 V.
It features an N-channel configuration and operates in enhancement mode.
Yes, it complies with IEC 61249-2-21 and RoHS 2002/95/EC standards.
This MOSFET is suitable for industrial power switching applications, including electronics manufacturing and HVAC controls.
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