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DiodesZetex N-Channel MOSFET, 2.8 A Continuous Drain Current, 20 V Drain Source Voltage, Surface Mount SOT-23 DMG2302UK-7

Category MOSFET Brand DiodesZetex Condition New

Specifications

Country of Origin India
Brand DiodesZetex
Height 1mm
Length 3mm
Model DMG2302UK-7
Width 1.4mm
Mount Type Surface
Series DMG2302UK
Maximum Operating Temperature 150°C
Package Type SOT-23
Minimum Operating Temperature -55°C
Pin Count 3
Automotive Standard AEC-Q101
Channel Type N
Maximum Continuous Drain Current Id 2.8A
Maximum Drain Source Voltage Vds 20V
Maximum Drain Source Resistance Rds 120mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 1.1W
Typical Gate Charge Qg @ Vgs 2.8nC
Maximum Gate Source Voltage Vgs -12, +12V
Forward Voltage Vf 700mV

Key Features

  • Compact SOT-23 package suitable for high-density PCB layouts.
  • N-channel enhancement mode with low 120 mΩ drain-source resistance.
  • Maximum power dissipation of 1.1 watts for reliable performance.
  • Wide operating temperature range from -55°C to 150°C ensuring durability.
  • Automotive grade component certified to AEC-Q101 standard.
  • Typical gate charge of 2.8 nC enabling efficient switching.
  • Maximum gate source voltage ±12 V for enhanced gate control.
  • Forward voltage drop rated at 700 mV for minimal power loss.

Product Description

DiodesZetex DMG2302UK-7 is an N-Channel MOSFET transistor specifically engineered for surface mount technology utilizing a compact 3-pin SOT-23 package. It offers a continuous drain current rating of 2.8 A with a maximum drain-source voltage of 20 V, making it suitable for low voltage switching and amplification applications.

This enhancement mode MOSFET features a low on-resistance of 120 mΩ which facilitates efficient power handling and energy saving during operation. The device supports operation over a broad temperature range from -55°C to 150°C, ensuring robust performance in industrial, automotive, and consumer electronics environments.

The DMG2302UK-7 complies with the AEC-Q101 automotive standard, making it ideal for automotive electronics systems requiring high reliability and quality. It dissipates up to 1.1 watts of power, supporting moderate thermal loads.

The typical gate charge is 2.8 nC at gate-source voltage, supporting high-speed switching with minimal loss. The maximum gate-source voltage rating of ±12 V provides tolerance to voltage spikes and enhances device longevity. Forward voltage of 700 mV also contributes to effective conduction.

With precise dimensions (3 mm length x 1.4 mm width x 1 mm height), this SOT-23 MOSFET is compact and well-suited for dense PCB assemblies. It is widely applicable in power management, motor control, load switching, and signal amplification tasks in various electronics manufacturing sectors.

Compact and lightweight surface mount device for efficient circuit design. High reliability for automotive and industrial electronic applications. Supports moderate power dissipation suitable for small to medium loads. Wide operating temperatures for harsh environmental conditions.

Low drain-source resistance minimizes energy loss and heat generation. Meets industry automotive standards ensuring quality assurance. Enhanced switching performance from low gate charge. Explore a wide range of semiconductor components such as MOSFETs and discrete semiconductors at EnvMart for your industrial and electronic design needs.

DiodesZetex N-Channel MOSFET, 2.8 A Continuous Drain Current, 20 V Drain Source Voltage, Surface Mount SOT-23 DMG2302UK-7
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Frequently Asked Questions

The maximum continuous drain current for this model is 2.8 A.

The maximum drain-source voltage is 20 V.

This model comes in a compact SOT-23 package.

The typical gate charge is 2.8 nC at the gate-source voltage.

It operates over a temperature range from -55°C to 150°C.

The maximum power dissipation is 1.1 watts.

The forward voltage drop is rated at 700 mV.

The dimensions are 3 mm in length, 1.4 mm in width, and 1 mm in height.

It complies with the AEC-Q101 automotive standard.

The maximum gate-source voltage is ±12 V.

The maximum drain-source resistance is 120 mΩ.

This model uses surface mounting.

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