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Infineon CoolMOS CE N-Channel MOSFET, 6.6 A, 550 V Enhancement Mode, 4-Pin SOT-223 IPN50R950CEATMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 1.7mm |
| Length | 6.7mm |
| Model | IPN50R950CEATMA1 |
| Width | 3.7mm |
| Mount Type | Surface |
| Series | CoolMOS CE |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-223 |
| Minimum Operating Temperature | -40°C |
| Pin Count | 4 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 6.6A |
| Maximum Drain Source Voltage Vds | 550V |
| Maximum Drain Source Resistance Rds | 950mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 5W |
| Typical Gate Charge Qg @ Vgs | 10.5nC |
| Maximum Gate Source Voltage Vgs | -30, +30V |
| Forward Voltage Vf | 830mV |
Key Features
- The device features an enhancement mode N-channel channel type for optimized switching.
- Maximum continuous drain current of 6.6 A supports robust power applications.
- Mount type is surface mount for easy PCB integration.
- Maximum power dissipation is 5 watts ensuring reliable thermal management.
- Typical gate charge of 10.5 nC at gate-source voltage provides efficient switching.
- Operating temperature ranges from -40°C to 150°C, suitable for harsh environments.
- A forward voltage of 830 mV ensures low conduction losses.
- Package dimensions are 6.7 mm length, 3.7 mm width, and 1.7 mm height.
Product Description
Infineon IPN50R950CEATMA1 CoolMOS CE N-Channel MOSFET is a high-performance power transistor designed for efficient switching in power electronics applications. Featuring a continuous drain current of 6.6 A and a maximum drain-source voltage of 550 V, this MOSFET operates reliably up to 150°C ambient temperature.
Manufactured in a surface-mount 4-pin SOT-223 package, it offers compact size with dimensions of 6.7 mm (L) x 3.7 mm (W) x 1.7 mm (H), making it ideal for space-constrained PCB layouts.
The enhancement mode channel ensures fast switching capabilities with a typical gate charge of 10.5 nC, supporting efficient power conversion and low switching losses. The device exhibits a forward voltage of 830 mV and maintains low Rds(on) of 950 mΩ, ensuring minimal conduction losses and high energy efficiency.
This MOSFET operates over a wide temperature range from -40°C to 150°C, suitable for industrial, automotive (non-AEC-Q101), and commercial power electronics environments. Its surface-mount design enables automated assembly for mass production.
Ideal applications include power supplies, motor control, industrial power systems, and other semiconductor discrete component uses requiring robust performance. The device features an enhancement mode N-channel channel type for optimized switching.
Maximum continuous drain current of 6.6 A supports robust power applications. Mount type is surface mount for easy PCB integration. Maximum power dissipation is 5 watts ensuring reliable thermal management. Typical gate charge of 10.5 nC at gate-source voltage provides efficient switching.
Operating temperature ranges from -40°C to 150°C, suitable for harsh environments. A forward voltage of 830 mV ensures low conduction losses. Package dimensions are 6.7 mm length, 3.7 mm width, and 1.7 mm height. Explore more Infineon MOSFETs and power semiconductor components in the Electronics & Electricals category on EnvMart for your project needs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 6.6 A, making it suitable for robust power applications.
This MOSFET has a maximum drain-source voltage rating of 550 V, allowing it to operate effectively in high-voltage applications.
The typical gate charge at gate-source voltage for this model is 10.5 nC, which supports efficient switching capabilities.
The package dimensions are 6.7 mm in length, 3.7 mm in width, and 1.7 mm in height, making it compact for PCB integration.
The maximum power dissipation for this MOSFET is 5 watts, ensuring reliable thermal management during operation.
This device features an enhancement mode N-channel type, which optimizes switching performance.
The forward voltage is 830 mV, which helps in minimizing conduction losses during operation.
The maximum gate-source voltage rating for this model is -30 V to +30 V, providing flexibility in circuit design.
It is suitable for power supplies, motor control, and industrial power systems, among other power electronics applications.
The maximum drain-source resistance (Rds(on)) is 950 mΩ, which ensures minimal conduction losses.
This MOSFET has a pin count of 4, designed for surface mount applications in compact layouts.
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