Infineon HEXFET N-Channel MOSFET 17 A 100 V Enhancement 3-Pin TO-252 IRLR3410TRLPBF

Infineon IRLR3410TRLPBF HEXFET N-Channel Power MOSFET is designed for high efficiency and power density in electronic and power management applications. It supports a continuous drain current of 17 amperes and can withstand a drain-source voltage of up to 100 volts, making it suitable for a wide range of industrial, automotive, and consumer electronics uses.

Encapsulated in a surface mount TO-252 package with three pins, this MOSFET is ideal for compact printed circuit board layouts. Equipped with Hexfet technology, it reduces conduction losses, contributing to greater overall system efficiency. The device operates reliably within a broad temperature range from -55°C up to 175°C, ensuring durability in harsh environments.

Additional technical specifications include a maximum power dissipation rating of 79 watts and a low drain-source resistance of 150 milliohms, optimizing thermal and electrical performance. The typical gate charge at specified gate voltage (Vgs) is 34 nC, supporting fast switching speeds with minimal energy loss. It can tolerate gate-source voltages up to ±16 volts, providing operational robustness.

The compact physical package measures 6.73 mm in length, 6.22 mm in width, and 2.39 mm in height, suitable for space-constrained assemblies. Infineon offers this MOSFET as part of its HEXFET series, known for high quality and performance in semiconductor devices.

This MOSFET is applicable in industrial power supplies, automotive control units, motor drives, consumer electronics, and general purpose switching applications. Its combination of high current handling, voltage rating, and efficient switching make it a reliable choice for designers requiring durable and efficient semiconductor components.

This MOSFET features an enhancement mode for improved switching performance. Compact TO-252 surface mount package enhances PCB design flexibility. High maximum power dissipation ensures capability in demanding loads. Wide operating temperature range supports diverse environmental conditions.

Low on-resistance minimizes conduction losses and heat generation. Optimized gate charge allows fast switching and better efficiency. Robust gate voltage tolerance adds reliability and safety margins. Physical dimensions are suitable for space-limited electronic assemblies.

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