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Infineon HEXFET N-Channel MOSFET 40 V 380 A Enhancement Mode Surface Mount TO-263 Package 8-Pin IRLS3034TRL7PP

Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Height 9.65mm
Length 10.67mm
Model IRLS3034TRL7PP
Width 4.83mm
Mount Type Surface
Series HEXFET
Maximum Operating Temperature 175°C
Package Type TO-263
Minimum Operating Temperature -55°C
Pin Count 8
Channel Type N
Maximum Continuous Drain Current Id 380A
Maximum Drain Source Voltage Vds 40V
Maximum Drain Source Resistance Rds 1.7mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 380W
Typical Gate Charge Qg @ Vgs 120nC
Maximum Gate Source Voltage Vgs -20, +20V
Forward Voltage Vf 1.3V

Key Features

  • Features 8-pin TO-263 surface mount package suitable for efficient PCB layouts.
  • Utilizes enhancement mode channel for controlled switching applications.
  • Maximum power dissipation rating of 380 W ensures robust operation under heavy loads.
  • Low on-resistance of 1.7 mΩ reduces conduction losses and improves efficiency.
  • Wide operating temperature range from -55°C to 175°C supports industrial and automotive environments.
  • Typical gate charge of 120 nC enables rapid switching performance.
  • Forward voltage drop of 1.3 V minimizes power dissipation during conduction.
  • Complies with Infineon’s HEXFET technology standards for power MOSFET devices.

Product Description

Infineon's IRLS3034TRL7PP HEXFET N-Channel MOSFET is a power semiconductor device designed for high efficiency and thermal performance.

It is engineered with a maximum continuous drain current rating of 380 A and a drain-to-source voltage capability of 40 V, making it suitable for demanding power switching applications.

The device comes in an 8-pin TO-263 surface mount package, which facilitates excellent heat dissipation and compact PCB footprints. The enhancement mode channel supports reliable and efficient switching in various industrial, automotive, and power management circuits.

The MOSFET features a low Rds(on) of 1.7 milliohms, which minimizes conduction losses and elevates system efficiency. It supports a typical gate charge of 120 nC at Vgs, ensuring fast switch transitions with reduced gate drive requirements.

With a maximum power dissipation rating of 380 W and operational temperature range from -55°C to 175°C, this device is rugged and suited for harsh thermal environments. Its typical forward voltage drop is 1.3 V which contributes to lower energy losses during operation.

Physical dimensions include length 10.67 mm, width 4.83 mm, and height 9.65 mm, making it appropriate for surface-mount assembly in compact electronic designs. 8-pin TO-263 surface mount package enhances thermal management capabilities.

Exceptional continuous drain current of 380 A for high power handling. Low conduction resistance ensures energy-efficient operation. Wide temperature range suitable for industrial and automotive environments. Optimized gate charge for rapid switching performance.

This Infineon HEXFET N-Channel MOSFET IRLS3034TRL7PP is ideal for use in industrial power electronics, automotive control systems, renewable energy inverters, and other commercial electrical equipment where efficient power switching is critical.

For detailed engineering design, integration, and PCB layout, Infineon provides comprehensive technical resources and support. Explore more Infineon MOSFET products and power semiconductors in the Electronics & Electricals category at EnvMart to support your next industrial or commercial project.

Infineon HEXFET N-Channel MOSFET 40 V 380 A Enhancement Mode Surface Mount TO-263 Package 8-Pin IRLS3034TRL7PP
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Frequently Asked Questions

The maximum continuous drain current for the IRLS3034TRL7PP is 380 A, making it suitable for high power applications.

This MOSFET can handle a maximum drain-to-source voltage of 40 V, which is critical for various power switching applications.

The on-resistance (Rds(on)) of this model is 1.7 mΩ, which helps to minimize conduction losses and improve efficiency.

The typical gate charge for the IRLS3034TRL7PP is 120 nC at Vgs, allowing for rapid switching performance.

The physical dimensions of the IRLS3034TRL7PP are 10.67 mm in length, 4.83 mm in width, and 9.65 mm in height.

This MOSFET operates within a temperature range of -55°C to 175°C, making it suitable for both industrial and automotive environments.

The IRLS3034TRL7PP comes in an 8-pin TO-263 surface mount package, which facilitates efficient PCB layouts and heat dissipation.

The maximum power dissipation rating for this model is 380 W, ensuring robust operation under heavy loads.

The typical forward voltage drop for the IRLS3034TRL7PP is 1.3 V, which helps to minimize power dissipation during conduction.

This model utilizes an enhancement mode N-channel, which is designed for controlled switching applications.

The maximum gate-source voltage for the IRLS3034TRL7PP is -20 V to +20 V, which is essential for safe operation.

This MOSFET is commonly used in industrial power electronics, automotive control systems, and renewable energy inverters.

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