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| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 9.65mm |
| Length | 10.67mm |
| Model | IRLS3034TRL7PP |
| Width | 4.83mm |
| Mount Type | Surface |
| Series | HEXFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-263 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 380A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 1.7mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 380W |
| Typical Gate Charge Qg @ Vgs | 120nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.3V |
Infineon's IRLS3034TRL7PP HEXFET N-Channel MOSFET is a power semiconductor device designed for high efficiency and thermal performance.
It is engineered with a maximum continuous drain current rating of 380 A and a drain-to-source voltage capability of 40 V, making it suitable for demanding power switching applications.
The device comes in an 8-pin TO-263 surface mount package, which facilitates excellent heat dissipation and compact PCB footprints. The enhancement mode channel supports reliable and efficient switching in various industrial, automotive, and power management circuits.
The MOSFET features a low Rds(on) of 1.7 milliohms, which minimizes conduction losses and elevates system efficiency. It supports a typical gate charge of 120 nC at Vgs, ensuring fast switch transitions with reduced gate drive requirements.
With a maximum power dissipation rating of 380 W and operational temperature range from -55°C to 175°C, this device is rugged and suited for harsh thermal environments. Its typical forward voltage drop is 1.3 V which contributes to lower energy losses during operation.
Physical dimensions include length 10.67 mm, width 4.83 mm, and height 9.65 mm, making it appropriate for surface-mount assembly in compact electronic designs. 8-pin TO-263 surface mount package enhances thermal management capabilities.
Exceptional continuous drain current of 380 A for high power handling. Low conduction resistance ensures energy-efficient operation. Wide temperature range suitable for industrial and automotive environments. Optimized gate charge for rapid switching performance.
This Infineon HEXFET N-Channel MOSFET IRLS3034TRL7PP is ideal for use in industrial power electronics, automotive control systems, renewable energy inverters, and other commercial electrical equipment where efficient power switching is critical.
For detailed engineering design, integration, and PCB layout, Infineon provides comprehensive technical resources and support. Explore more Infineon MOSFET products and power semiconductors in the Electronics & Electricals category at EnvMart to support your next industrial or commercial project.
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