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Infineon HEXFET N-Channel MOSFET, 180 A Maximum Continuous Drain Current, 100 V Drain Source Voltage IRFS4010TRLPBF

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Infineon HEXFET N-Channel MOSFET, 180 A Maximum Continuous Drain Current, 100 V Drain Source Voltage IRFS4010TRLPBF

Name: Infineon HEXFET N-Channel MOSFET, 180 A Maximum Continuous Drain Current, 100 V Drain Source Voltage IRFS4010TRLPBF
Brand: Infineon
SKU: 200544
Price: 3.38 USD
Availability: InStock

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Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin	India
Brand	Infineon
Height	4.83mm
Length	10.67mm
Model	IRFS4010TRLPBF
Width	9.65mm
Mount Type	Surface
Series	HEXFET
Maximum Operating Temperature	175°C
Package Type	TO-263
Minimum Operating Temperature	-55°C
Pin Count	3
Channel Type	N
Maximum Continuous Drain Current Id	180A
Maximum Drain Source Voltage Vds	100V
Maximum Drain Source Resistance Rds	4.7mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	375W
Typical Gate Charge Qg @ Vgs	143nC
Maximum Gate Source Voltage Vgs	-20, +20V
Forward Voltage Vf	1.3V
N-Channel MOSFET, 180 A, 100 V, 3-Pin D2PAK Infineon IRFS4010PBFBrand	Infineon

Key Features

Supports maximum continuous drain current of 180 amperes for high load applications.
Rated for 100 volts maximum drain-source voltage for versatile usage.
Low on-resistance of 4.7 milliohms minimizes power loss and heat generation.
Compact 3-pin TO-263 surface-mount package for efficient PCB integration.
Enhancement mode operation suitable for precise power control.
Handles power dissipation up to 375 watts for demanding tasks.
Operates reliably up to 175 degrees Celsius for enhanced thermal management.
Typical gate charge of 143 nanocoulombs ensures fast switching performance.

Product Description

Infineon IRFS4010TRLPBF is a HEXFET N-Channel MOSFET designed for high performance and reliability in electronic power applications. Featuring a maximum continuous drain current of 180 amperes and a maximum drain-source voltage of 100 volts, it delivers robust power management capabilities.

The device is constructed within a compact TO-263 3-pin surface-mount package, allowing straightforward integration into printed circuit boards. Its low on-resistance of 4.7 milliohms significantly reduces power loss and heat, contributing to high efficiency.

The IRFS4010TRLPBF operates in enhancement mode and is capable of dissipating up to 375 watts of power. Its high maximum operating junction temperature of 175 degrees Celsius ensures it performs efficiently under thermal stress in demanding industrial environments.

This MOSFET features a typical gate charge of 143 nanocoulombs at Vgs, enabling high-speed switching suitable for synchronous rectification in switched-mode power supplies, uninterruptible power systems, hard-switched circuits, and automation equipment power management.

Supports continuous drain current up to 180A for substantial loads. Maximum drain-source voltage of 100V for versatile applications. Low Rds(on) of 4.7mΩ minimizes power dissipation and heat generation. Compact TO-263 3-pin surface mount package for PCB assembly.

Enhancement mode device to facilitate efficient power control. Power dissipation rating of 375W enables heavy-duty operation. High operating temperature tolerance up to 175°C for thermal reliability. Typical gate charge of 143nC supports fast switching speeds.

Applications include use in synchronous rectifiers of switched-mode power supplies, uninterruptible power supplies, hard-switched and high-frequency circuits, and power management circuits in automation systems.

This MOSFET is engineered to provide reliable, efficient power switching performance in industrial, electrical engineering, and manufacturing settings. Its robust design also supports use in demanding HVAC, laboratory, and water treatment equipment requiring precise and efficient power control.

Explore a wide selection of Infineon semiconductor components and MOSFET devices at EnvMart for your advanced electronic design needs.

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Frequently Asked Questions

The maximum continuous drain current for this model is 180 amperes, making it suitable for high load applications.

It is rated for a maximum drain-source voltage of 100 volts, allowing for versatile usage in various applications.

This MOSFET comes in a compact TO-263 surface-mount package, facilitating efficient PCB integration.

The on-resistance (Rds(on)) is 4.7 milliohms, which minimizes power loss and heat generation during operation.

The typical gate charge is 143 nanocoulombs, which supports fast switching performance.

It can handle a maximum power dissipation of up to 375 watts, suitable for demanding tasks.

The MOSFET operates reliably within a temperature range of -55°C to 175°C, ensuring thermal management under various conditions.

It features an N-channel configuration, which is typical for enhancement mode devices used in power applications.

This model has a pin count of 3, which is standard for its package type.

It is suitable for use in synchronous rectifiers of switched-mode power supplies, uninterruptible power supplies, and automation equipment power management.

The forward voltage rating is 1.3 volts, which is relevant for its performance in circuits.

The maximum gate-source voltage is rated at -20 to +20 volts, which defines its operational limits.