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Infineon HEXFET N-Channel Power MOSFET 400 A 40 V Enhancement 8-Pin TO-263 IRFS3004TRL7PP
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 9.65mm |
| Length | 10.67mm |
| Model | IRFS3004TRL7PP |
| Width | 4.83mm |
| Mount Type | Surface |
| Series | HEXFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-263 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 400A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 1.25mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 380W |
| Typical Gate Charge Qg @ Vgs | 160nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.3V |
Key Features
- Surface mount TO-263 package with 8 pins ensures easy PCB integration.
- Maximum power dissipation rating of 380 W supports high power applications.
- Low drain-source resistance of 1.25 milliohms minimizes conduction losses.
- Wide operating temperature range from -55°C to 175°C for robust performance.
- Typical gate charge of 160 nC allows efficient switching.
- Forward voltage drop of 1.3 V facilitates power efficiency.
- Designed for enhancement mode operation with N-channel configuration.
- Suitable for industrial, automotive (non-AEC-Q101), and power management applications.
Product Description
Infineon IRFS3004TRL7PP is a HEXFET N-Channel power MOSFET featuring a maximum continuous drain current of 400 A and a drain-source voltage rating of 40 V, making it ideal for high-power electronic applications requiring efficient switching and low conduction losses.
Housed in an 8-pin TO-263 surface-mount package, this device is engineered with an ultra-low typical drain-source resistance of 1.25 milliohms. This allows for reduced power dissipation during operation and improved thermal management with maximum power dissipation rated at 380 W.
Designed for enhancement mode operation, it exhibits typical gate charge of 160 nanocoulombs at Vgs, providing efficient gate drive for fast switching speeds. The device has a wide operating temperature range from -55°C to 175°C, ensuring rugged performance in harsh environments.
The IRFS3004TRL7PP's physical dimensions of 10.67 mm length, 4.83 mm width, and 9.65 mm height enable compact PCB layouts. Despite not being automotive AEC-Q101 qualified, it offers reliable operation suitable for industrial, laboratory, construction, power management, and general electronics projects.
Surface mount TO-263 8-pin package for easy integration. 400 A maximum continuous drain current. 40 V maximum drain-source voltage rating. Low Rds(on) of 1.25 milliohms reduces conduction losses. High maximum power dissipation of 380 W supports heavy loads.
Wide operating temperature span from -55°C to +175°C. Typical gate charge of 160 nC for efficient switching. Forward voltage of 1.3 V optimizes power efficiency. Enhancement mode N-Channel MOSFET operation.
This Infineon HEXFET MOSFET is widely used in power electronics, industrial machines, automotive electronics (non-AEC-Q101), renewable energy systems, and electronic power supplies, providing high efficiency and thermal reliability.
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Frequently Asked Questions
The maximum continuous drain current for this model is 400 A.
This MOSFET has a maximum drain-source voltage rating of 40 V.
The typical gate charge for this unit is 160 nC at Vgs.
The maximum power dissipation rating for this model is 380 W.
The dimensions of the TO-263 package are 10.67 mm in length, 4.83 mm in width, and 9.65 mm in height.
The drain-source resistance (Rds(on)) of this MOSFET is 1.25 milliohms.
This unit operates within a temperature range of -55°C to 175°C.
This MOSFET features an N-channel configuration designed for enhancement mode operation.
It is suitable for industrial, automotive (non-AEC-Q101), and power management applications.
The forward voltage drop of this model is 1.3 V.
This MOSFET has a pin count of 8.
The maximum gate-source voltage for this model is -20 V to +20 V.
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