Infineon HEXFET N-Channel MOSFET 80A 100V Enhancement Mode 3-Pin TO-263 IRF8010STRLPBF

Infineon IRF8010STRLPBF HEXFET N-Channel MOSFET is a high-performance semiconductor designed for power management applications requiring efficient conduction and thermal resilience. With a maximum continuous drain current rating of 80 amperes and voltage rating of 100 volts, this device is tailored for demanding electronic circuits.

The enhancement mode channel facilitates controlled conductivity with a low maximum drain-source resistance of 15 milliohms, reducing conduction losses and enhancing overall system efficiency. Its TO-263 surface mount package with three pins offers ease of integration in compact board layouts while maintaining excellent thermal characteristics, supporting power dissipation up to 260 watts.

The device supports a broad operating temperature range from -55°C to 175°C, making it suitable for harsh industrial and automotive environments. With a typical gate charge of 81 nanocoulombs and a gate-source voltage rating of -20 to +20 volts, it provides precise switching capabilities. Its forward voltage of 1.3 volts ensures minimal voltage drop during conduction, improving power efficiency.

Designed as part of Infineon's extensive HEXFET family, this MOSFET addresses applications in power supplies, motor control, switching regulators, and industrial electronics, where high current, voltage ratings, and durability are required. The device complies with standard industrial specifications though it does not carry specific automotive standards.

Overall, the IRF8010STRLPBF offers an effective solution for designers seeking a reliable, surface-mount N-channel MOSFET with strong thermal and electrical performance parameters for advanced power and switching applications.

Supports maximum continuous drain current of 80 amperes. Operates at a maximum drain-source voltage of 100 volts. Low on-resistance of 15 milliohms for efficient conduction. Maximum power dissipation rating of 260 watts for robust thermal management.

Runs in enhancement channel mode ensuring optimal performance. Surface mount TO-263 package with 3 pins for compact integration. Wide operating temperature range from -55°C to 175°C. Typical gate charge of 81 nanocoulombs at Vgs.

Maximum gate-source voltage ranges from -20 to +20 volts. Forward voltage drop of 1.3 volts enhances device efficiency.

This Infineon MOSFET is ideal for applications in electronics manufacturing requiring high current switching, power conversion, and energy management in industrial, automotive, and consumer electronics domains. Explore related components and alternatives in the MOSFET category at EnvMart.