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Infineon CoolMOS CE N-Channel MOSFET, 4.8 A, 550 V Enhancement Mode, 4-Pin SOT-223 IPN50R1K4CEATMA1

Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Height 1.7mm
Length 6.7mm
Model IPN50R1K4CEATMA1
Width 3.7mm
Mount Type Surface
Series CoolMOS CE
Maximum Operating Temperature 150°C
Package Type SOT-223
Minimum Operating Temperature -40°C
Pin Count 4
Channel Type N
Maximum Continuous Drain Current Id 4.8A
Maximum Drain Source Voltage Vds 550V
Maximum Drain Source Resistance Rds 1.4Ω
Channel Mode Enhancement
Maximum Power Dissipation Pd 5W
Typical Gate Charge Qg @ Vgs 8.2nC
Maximum Gate Source Voltage Vgs -30, +30V
Forward Voltage Vf 830mV

Key Features

  • Features a 4-pin SOT-223 surface mount package for easy integration.
  • Operates with an enhancement channel mode and low on-resistance of 1.4 Ω.
  • Supports maximum power dissipation of 5 W and peak operating temperature of 150°C.
  • Typical gate charge of 8.2 nC at gate-source voltage enhances switching performance.
  • Designed for operation in harsh temperature environments from -40°C up to 150°C.
  • Forward voltage of 830 mV and gate voltage tolerance from -30V to +30V.

Product Description

Infineon's IPN50R1K4CEATMA1 CoolMOS CE N-Channel MOSFET is designed for efficient power conversion applications, featuring a 4.8 A continuous drain current rating and a maximum drain-source voltage of 550 V. Housed in a compact 4-pin SOT-223 surface mount package, this device offers reliable operation in demanding industrial, electronic, and power management systems.

The MOSFET utilizes enhancement channel mode technology with a low maximum drain-source resistance of 1.4 Ω, resulting in minimal conduction losses. It supports a maximum power dissipation of 5 W and can operate at temperatures ranging from -40°C to 150°C, suitable for harsh environmental conditions.

With a typical gate charge of 8.2 nC at Vgs and a gate voltage rating from -30 V to +30 V, the device ensures optimized switching performance and protection. The forward voltage of 830 mV further contributes to efficient operation in power circuits.

Compact physical dimensions (6.7 mm length × 3.7 mm width × 1.7 mm height) enable flexible PCB space utilization in dense assemblies. This MOSFET is ideal for industrial power supplies, automotive electronics, and commercial electronic devices requiring enhanced efficiency and reliability.

4-pin SOT-223 surface mount package simplifies assembly and improves thermal management. Low on-resistance enhances efficiency in power conversion and switching. Wide operating temperature range supports industrial and automotive applications.

Robust gate voltage tolerance protects against voltage spikes. Compact size for space-constrained designs. Low gate charge enables fast switching speeds to reduce energy loss. Maximum power dissipation of 5 W ensures reliability in demanding conditions.

This product is part of Infineon's CoolMOS CE series, known for delivering best-in-class performance, power density, and cost-effectiveness. It is suitable for use in industrial, automotive, commercial, and manufacturing environments that require efficient and robust power semiconductors.

Explore our wide range of semiconductor components to find the perfect match for your power electronic designs at EnvMart.

Infineon CoolMOS CE N-Channel MOSFET, 4.8 A, 550 V Enhancement Mode, 4-Pin SOT-223 IPN50R1K4CEATMA1
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Frequently Asked Questions

The maximum continuous drain current rating of this model is 4.8 A.

It supports a maximum drain-source voltage of 550 V.

The typical gate charge at gate-source voltage is 8.2 nC.

This unit is housed in a 4-pin SOT-223 surface mount package.

The maximum power dissipation is 5 W.

It operates within a temperature range of -40°C to 150°C.

The forward voltage is 830 mV.

The maximum gate-source voltage tolerance is from -30 V to +30 V.

The dimensions are 6.7 mm in length, 3.7 mm in width, and 1.7 mm in height.

It utilizes an enhancement channel type.

The maximum drain-source resistance is 1.4 Ω.

The product is manufactured in India.

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