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| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 1.7mm |
| Length | 6.7mm |
| Model | IPN50R1K4CEATMA1 |
| Width | 3.7mm |
| Mount Type | Surface |
| Series | CoolMOS CE |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-223 |
| Minimum Operating Temperature | -40°C |
| Pin Count | 4 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 4.8A |
| Maximum Drain Source Voltage Vds | 550V |
| Maximum Drain Source Resistance Rds | 1.4Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 5W |
| Typical Gate Charge Qg @ Vgs | 8.2nC |
| Maximum Gate Source Voltage Vgs | -30, +30V |
| Forward Voltage Vf | 830mV |
Infineon's IPN50R1K4CEATMA1 CoolMOS CE N-Channel MOSFET is designed for efficient power conversion applications, featuring a 4.8 A continuous drain current rating and a maximum drain-source voltage of 550 V. Housed in a compact 4-pin SOT-223 surface mount package, this device offers reliable operation in demanding industrial, electronic, and power management systems.
The MOSFET utilizes enhancement channel mode technology with a low maximum drain-source resistance of 1.4 Ω, resulting in minimal conduction losses. It supports a maximum power dissipation of 5 W and can operate at temperatures ranging from -40°C to 150°C, suitable for harsh environmental conditions.
With a typical gate charge of 8.2 nC at Vgs and a gate voltage rating from -30 V to +30 V, the device ensures optimized switching performance and protection. The forward voltage of 830 mV further contributes to efficient operation in power circuits.
Compact physical dimensions (6.7 mm length × 3.7 mm width × 1.7 mm height) enable flexible PCB space utilization in dense assemblies. This MOSFET is ideal for industrial power supplies, automotive electronics, and commercial electronic devices requiring enhanced efficiency and reliability.
4-pin SOT-223 surface mount package simplifies assembly and improves thermal management. Low on-resistance enhances efficiency in power conversion and switching. Wide operating temperature range supports industrial and automotive applications.
Robust gate voltage tolerance protects against voltage spikes. Compact size for space-constrained designs. Low gate charge enables fast switching speeds to reduce energy loss. Maximum power dissipation of 5 W ensures reliability in demanding conditions.
This product is part of Infineon's CoolMOS CE series, known for delivering best-in-class performance, power density, and cost-effectiveness. It is suitable for use in industrial, automotive, commercial, and manufacturing environments that require efficient and robust power semiconductors.
Explore our wide range of semiconductor components to find the perfect match for your power electronic designs at EnvMart.
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