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Infineon CoolMOS P6 N-Channel MOSFET, 23.8 A, 650 V Enhancement Mode, 3-Pin TO-263 IPB60R160P6ATMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 9.45mm |
| Length | 10.31mm |
| Model | IPB60R160P6ATMA1 |
| Width | 4.57mm |
| Mount Type | Surface |
| Series | CoolMOS P6 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-263 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 23.8A |
| Maximum Drain Source Voltage Vds | 650V |
| Maximum Drain Source Resistance Rds | 160mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 176W |
| Typical Gate Charge Qg @ Vgs | 44nC |
| Maximum Gate Source Voltage Vgs | -30, +30V |
| Forward Voltage Vf | 900mV |
Key Features
- The device employs enhancement mode channel type for improved switching performance.
- Designed for surface mounting applications with a robust TO-263 package.
- Maximum power dissipation rating is 176 W, suitable for high-power electronic applications.
- It supports a maximum operating temperature of 150°C ensuring reliability under stress.
- Typical gate charge is 44 nC at gate-source voltage, enabling efficient driving.
- Features low drain-source resistance of 160 mΩ, minimizing conduction losses.
- With a maximum gate-source voltage tolerance of -30 V to +30 V for operational safety.
- Physical dimensions include height 9.45 mm, length 10.31 mm, and width 4.57 mm for compact integration.
Product Description
Infineon IPB60R160P6ATMA1 CoolMOS P6 N-Channel MOSFET is a power semiconductor device engineered for efficient power switching applications, featuring a 23.8 A continuous drain current capacity and 650 V maximum drain-source voltage.
Housed in a TO-263 surface-mount package, it supports enhanced operational performance with an enhancement mode channel type. The device provides a maximum power dissipation of 176 W and operates reliably at temperatures up to 150°C, making it suitable for industrial, automotive (non-AEC), telecommunications, and power management circuits.
The typical gate charge of 44 nC at specified gate voltages offers fast switching speeds while maintaining low conduction losses thanks to a minimal 160 mΩ Rds(on). Its tolerance to gate-source voltages ranging from -30 V to +30 V ensures robustness in harsh electrical environments.
Physical dimensions (9.45 mm height, 10.31 mm length, 4.57 mm width) make the MOSFET ideal for compact PCB layouts. This 3-pin MOSFET supports power factor correction, lighting control, consumer electronics, solar power systems, and server power supplies.
The device combines high efficiency and power density of the CoolMOS P6 series for demanding applications. Enhanced protection features and reliable performance in surface mount form factor. Suitable for semiconductor discrete applications requiring low switching losses.
Supports a wide temperature range from -55°C to 150°C for varied operating conditions. Designed for easy integration with standard power circuit layouts and manufacturing processes.
Choose Infineon CoolMOS P6 N-Channel MOSFET IPB60R160P6ATMA1 for high-efficiency power control and reliable performance across industrial and electronic power applications. Explore more semiconductors and power electronics components on EnvMart.
Explore more products in our Discrete Semiconductors category.
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Frequently Asked Questions
The maximum continuous drain current for this model is 23.8 A.
This unit has a maximum drain-source voltage rating of 650 V.
The maximum power dissipation rating is 176 W, making it suitable for high-power applications.
The physical dimensions are 9.45 mm in height, 10.31 mm in length, and 4.57 mm in width.
The typical gate charge is 44 nC at the specified gate-source voltage.
It supports a maximum operating temperature of 150°C.
This MOSFET is designed for surface mounting applications.
It features a low drain-source resistance of 160 mΩ, which minimizes conduction losses.
This model employs an N-channel enhancement mode for improved switching performance.
The maximum gate-source voltage tolerance is from -30 V to +30 V.
This device is suitable for applications in power factor correction, lighting control, consumer electronics, solar power systems, and server power supplies.
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