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Toshiba U-MOSVIII-H N-Channel MOSFET 157 A, 80 V Enhancement Mode, 3-Pin TO-220 TK72E08N1,S1X(S

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Toshiba U-MOSVIII-H N-Channel MOSFET 157 A, 80 V Enhancement Mode, 3-Pin TO-220 TK72E08N1,S1X(S

Name: Toshiba U-MOSVIII-H N-Channel MOSFET 157 A, 80 V Enhancement Mode, 3-Pin TO-220 TK72E08N1,S1X(S
Brand: Toshiba
SKU: 197243
Price: 2.15 USD
Availability: InStock

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Category MOSFET Brand Toshiba Condition New

Specifications

Country of Origin	Japan
Brand	Toshiba
Height	15.1mm
Length	10.16mm
Model	TK72E08N1,S1X(S
Width	4.45mm
Mount Type	Through Hole
Series	U-MOSVIII-H
Maximum Operating Temperature	150°C
Package Type	TO-220
Pin Count	3
Channel Type	N
Maximum Continuous Drain Current Id	157A
Maximum Drain Source Voltage Vds	80V
Maximum Drain Source Resistance Rds	4.3mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	192W
Typical Gate Charge Qg @ Vgs	81nC
Maximum Gate Source Voltage Vgs	-20, +20V
Forward Voltage Vf	-1.7V

Key Features

The device features enhancement mode channel operation for reliable switching.
It has low maximum drain-source resistance of 4.3 milliohms reducing power loss.
Maximum power dissipation capability is 192 watts, ensuring high performance under load.
Rated for operating temperatures up to 150°C for industrial reliability.
Typical gate charge at gate-source voltage is 81 nanocoulombs, facilitating fast switching.
Mount type is through-hole for easy PCB assembly in power electronics.
Forward voltage drop of -1.7 V improves efficiency in conduction states.
Manufactured in Japan adhering to high quality standards.

Product Description

Toshiba TK72E08N1,S1X(S is a high-performance U-MOSVIII-H series N-Channel MOSFET designed for demanding power electronics applications. It provides a maximum continuous drain current of 157 amperes and can sustain a drain-source voltage of 80 volts, making it suitable for robust power switching and amplification duties.

The device utilizes enhancement mode channel operation to ensure efficient switching behavior and low on-resistance, which is specified at a maximum of 4.3 milliohms. This low resistance minimizes power loss and heat generation, supporting sustained operation at a maximum power dissipation of 192 watts. Its thermal tolerance is high, with maximum operating temperatures reaching 150°C, ensuring it can operate reliably even in harsh industrial environments.

Its compact 3-pin TO-220 package is ideal for through-hole mounting, enabling secure and stable circuit assembly. The transistor is designed with a typical gate charge of 81 nC at the gate-source voltage, supporting fast switching frequencies which are critical in many electronics and automotive controls.

Forward voltage is rated at -1.7 volts, contributing to efficient conduction. Precise component dimensions of 15.1 mm height, 10.16 mm length, and 4.45 mm width facilitate integration in compact designs.

Enhancement mode N-Channel MOSFET suitable for power switching applications. Low drain-source resistance of 4.3 milliohms reduces conduction losses. High current capacity of 157 A supports demanding load conditions. Maximum power dissipation of 192 W ensures durability under stress.

High operating temperature tolerance up to 150°C for industrial use. Through-hole mount type TO-220 package for reliable PCB integration. Typical gate charge of 81 nC enables fast switching performance. Manufactured in Japan to high quality standards.

This MOSFET is well suited for applications in industrial electronics, automotive electronics, power supplies, and other high-current switching circuits. It supports enhanced design reliability and efficiency for demanding semiconductor component needs.

Explore EnvMart's extensive semiconductor and electronic components catalog for more high-quality Toshiba products and similar MOSFET solutions.

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Frequently Asked Questions

The maximum continuous drain current of this model is 157 amperes, making it suitable for demanding power applications.

This MOSFET can sustain a maximum drain-source voltage of 80 volts, which is crucial for robust power switching.

It has a maximum power dissipation capability of 192 watts, ensuring high performance under load conditions.

The maximum drain-source resistance is 4.3 milliohms, which helps reduce power loss during operation.

The typical gate charge at gate-source voltage is 81 nanocoulombs, facilitating fast switching performance.

This model comes in a TO-220 package and is designed for through-hole mounting, allowing for easy PCB assembly.

The dimensions of this unit are 15.1 mm in height, 10.16 mm in length, and 4.45 mm in width.

It is rated for a maximum operating temperature of 150°C, ensuring reliability in industrial environments.

This model utilizes enhancement mode channel operation, which is essential for efficient switching behavior.

The forward voltage drop is rated at -1.7 volts, which improves efficiency during conduction states.

The maximum gate-source voltage for this MOSFET is rated at -20 to +20 volts, allowing for versatile control.

This MOSFET is well suited for applications in industrial electronics, automotive electronics, and power supplies, particularly in high-current switching circuits.