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Toshiba Type P-Channel MOSFET 3.5 A 60 V Surface Mount 3-Pin SOT-23 Package SSM3J351R,LF(T

Category MOSFET Brand Toshiba Condition New

Specifications

Country of Origin India
Brand Toshiba
Height 0.8mm
Length 2.4mm
Model SSM3J351R,LF(T
Width 2.9mm
Mount Type Surface
Maximum Operating Temperature 150°C
Package Type SOT-23
Minimum Operating Temperature -55°C
Pin Count 3
Automotive Standard AEC-Q101
Channel Type Type P
Maximum Continuous Drain Current Id 3.5A
Maximum Drain Source Voltage Vds 60V
Maximum Drain Source Resistance Rds 129mΩ
Maximum Power Dissipation Pd 2W
Typical Gate Charge Qg @ Vgs 15.1nC
Maximum Gate Source Voltage Vgs -20V
Forward Voltage Vf 0.85V

Key Features

  • The MOSFET is designed for power management and switching applications.
  • Maximum drain current of 3.5 A supports moderate power loads.
  • Compact SOT-23 package with dimensions of 2.4 mm length, 2.9 mm width, and 0.8 mm height.
  • Features low on-resistance of 129 mΩ to ensure efficient conduction.
  • Operates over a wide temperature range from -55°C to 150°C for reliability.
  • Maximum gate-source voltage rating of -20 V prevents damage during switching.
  • Gate charge is 15.1 nC at Vgs, aiding in fast switching response.
  • Maximum power dissipation rated at 2 W for thermal considerations.

Product Description

The Toshiba SSM3J351R,LF(T is a Type P-Channel MOSFET designed for surface mount applications, featuring a maximum continuous drain current of 3.5 A and a drain-source voltage rating of 60 V. Packaged in a compact 3-pin SOT-23 case, it offers low drain-source resistance of 129 mΩ to optimize power efficiency in switching operations.

This MOSFET operates reliably over a temperature range of -55°C to 150°C, making it suitable for robust industrial, automotive, and power management electronic designs where thermal stability is critical. The maximum gate-source voltage of -20 V and a forward voltage of 0.85 V support safe and efficient switching control.

With a typical gate charge of 15.1 nC at gate voltage, the device ensures fast switching speeds with minimal delay, which is essential in high-frequency applications. The maximum power dissipation of 2 W requires appropriate thermal management in design implementations.

The device meets the automotive industry standard AEC-Q101, ensuring its suitability for automotive electronics under demanding conditions. Its small SOT-23 footprint (2.4 mm x 2.9 mm x 0.8 mm) allows for compact PCB layouts and surface mount designs.

Applications include power management switching, load switching, and automotive circuits requiring reliable P-Channel MOSFETs. The product is ideal for use in industrial electronics, automotive systems, and consumer electronics where space and efficiency are priorities.

The MOSFET is designed for power management and switching applications. Maximum drain current of 3.5 A supports moderate power loads. Compact SOT-23 package with dimensions of 2.4 mm length, 2.9 mm width, and 0.8 mm height.

Features low on-resistance of 129 mΩ to ensure efficient conduction. Operates over a wide temperature range from -55°C to 150°C for reliability. Maximum gate-source voltage rating of -20 V prevents damage during switching.

Gate charge is 15.1 nC at Vgs, aiding in fast switching response. Maximum power dissipation rated at 2 W for thermal considerations. Automotive grade compliant with AEC-Q101 standard. Explore more MOSFETs and other semiconductor products in the Electronics & Electricals section of EnvMart for your industrial and design needs.

Toshiba Type P-Channel MOSFET 3.5 A 60 V Surface Mount 3-Pin SOT-23 Package SSM3J351R,LF(T
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