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Toshiba DTMOSIV N-Channel MOSFET, 9.7 A, 600 V, Enhancement Mode, TO-220 Package, 3-Pin TK10A60W,S4VX(M

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Toshiba DTMOSIV N-Channel MOSFET, 9.7 A, 600 V, Enhancement Mode, TO-220 Package, 3-Pin TK10A60W,S4VX(M

Name: Toshiba DTMOSIV N-Channel MOSFET, 9.7 A, 600 V, Enhancement Mode, TO-220 Package, 3-Pin TK10A60W,S4VX(M
Brand: Toshiba
SKU: 197231
Price: 1.58 USD
Availability: InStock

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Category MOSFET Brand Toshiba Condition New

Specifications

Country of Origin	Japan
Brand	Toshiba
Height	15mm
Length	10mm
Model	TK10A60W,S4VX(M
Width	4.5mm
Mount Type	Through Hole
Series	DTMOSIV
Maximum Operating Temperature	150°C
Package Type	TO-220
Pin Count	3
Channel Type	N
Maximum Continuous Drain Current Id	9.7A
Maximum Drain Source Voltage Vds	600V
Maximum Drain Source Resistance Rds	380mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	30W
Typical Gate Charge Qg @ Vgs	20nC
Maximum Gate Source Voltage Vgs	-30, +30V
Forward Voltage Vf	-1.7V

Key Features

High maximum continuous drain current of 9.7 A for robust power applications.
600 V maximum drain-source voltage suitable for high-voltage circuits.
TO-220 package offers easy through-hole mounting and heat dissipation.
Low maximum drain-source resistance of 380 milliohms for efficient switching.
Capable of handling maximum power dissipation of 30 W.
Operating temperature rated up to 150°C for reliable performance.
Typical gate charge of 20 nanocoulombs enables fast switching speeds.
Maximum gate-source voltage range from -30 V to +30 V for flexible control.

Product Description

Toshiba TK10A60W,S4VX(M is a high-performance DTMOSIV N-Channel MOSFET designed for power electronic applications requiring high efficiency and reliability. It features a continuous drain current of 9.7 A and can withstand drain-source voltages up to 600 V.

This MOSFET operates in enhancement mode and is housed in a TO-220 package suitable for through-hole mounting, ensuring excellent heat dissipation and mechanical stability. Its low on-resistance of 380 milliohms minimizes conduction losses, thereby improving overall circuit efficiency.

The device supports a maximum power dissipation of 30 W and can function reliably in elevated temperatures up to 150°C, making it ideal for industrial, automotive, and power management systems.

The gate of this MOSFET has a typical charge of 20 nC and endures gate-source voltages in the range of -30 V to +30 V, providing robust and flexible gate drive capability. Compact in size with dimensions of 10 mm in length, 4.5 mm in width, and 15 mm in height, the MOSFET is engineered to save PCB space while delivering high performance.

Manufactured in Japan, this component adheres to stringent quality and reliability standards, critical for advanced electronic circuits across industrial and commercial sectors. High maximum continuous drain current of 9.7 A for robust power applications.

600 V maximum drain-source voltage suitable for high-voltage circuits. TO-220 package offers easy through-hole mounting and heat dissipation. Low maximum drain-source resistance of 380 milliohms for efficient switching. Capable of handling maximum power dissipation of 30 W.

Operating temperature rated up to 150°C for reliable performance. Typical gate charge of 20 nanocoulombs enables fast switching speeds. Maximum gate-source voltage range from -30 V to +30 V for flexible control. Compact dimensions: Length 10 mm, Width 4.5 mm, Height 15 mm.

Manufactured in Japan ensuring high-quality semiconductor standards.

This Toshiba MOSFET series DTMOSIV product is suitable for applications including power management in industrial controls, automotive electronics, and energy systems, where high voltage and current handling capabilities are required.

For comprehensive industrial-grade electronic components, explore more Toshiba MOSFETs and semiconductors in the EnvMart catalog.

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Frequently Asked Questions

The maximum continuous drain current for this model is 9.7 A, making it suitable for robust power applications.

It can withstand a maximum drain-source voltage of 600 V, which is suitable for high-voltage circuits.

This model is housed in a TO-220 package, which allows for easy through-hole mounting and effective heat dissipation.

The MOSFET is capable of handling a maximum power dissipation of 30 W.

The typical gate charge is 20 nanocoulombs, enabling fast switching speeds.

The maximum gate-source voltage range is from -30 V to +30 V, providing flexibility in gate control.

The dimensions of this unit are 10 mm in length, 4.5 mm in width, and 15 mm in height.

It is rated for a maximum operating temperature of 150°C, ensuring reliable performance in various conditions.

The maximum drain-source resistance is 380 milliohms, which helps minimize conduction losses during operation.

This model features an N-channel configuration and operates in enhancement mode.

This component is manufactured in Japan, adhering to stringent quality and reliability standards.

It is suitable for applications in power management, industrial controls, automotive electronics, and energy systems, where high voltage and current handling capabilities are required.