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Vishay TrenchFET N-Channel MOSFET 80 V 9.5 A Enhancement Mode 8-Pin SO-8 SI4896DY-T1-E3
Specifications
| Country of Origin | China |
|---|---|
| Brand | Vishay |
| Height | 1.75mm |
| Length | 5mm |
| Model | SI4896DY-T1-E3 |
| Width | 6.2mm |
| Mount Type | Surface |
| Series | TrenchFET |
| Maximum Operating Temperature | 150°C |
| Package Type | SO-8 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| ANSI/ESD S20.20 | 2014 |
| BS EN 61340-5-1 | 2007 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 9.5A |
| Maximum Drain Source Voltage Vds | 80V |
| Maximum Drain Source Resistance Rds | 22mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 1.56W |
| Typical Gate Charge Qg @ Vgs | 34nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.1V |
Key Features
- TrenchFET technology reduces switching and conduction losses for enhanced efficiency.
- Maximum continuous drain current of 9.5 A suitable for power switching applications.
- Drain-source voltage rating of 80 V and maximum gate-source voltage of 20 V.
- Low maximum drain-source resistance of 22 milliohms reduces power dissipation.
- Wide operating temperature range from -55°C to 150°C for harsh environments.
- Compact SO-8 surface mount package with 8 pins for PCB integration.
- Typical gate charge of 34 nC enables fast switching speeds.
- Power dissipation rated at 1.56 W to handle thermal loads efficiently.
Product Description
Vishay SI4896DY-T1-E3 is a TrenchFET N-Channel MOSFET designed for power switching and load control in electronic systems. Featuring a maximum continuous drain current of 9.5 A and a drain-source voltage of 80 V, this MOSFET supports enhanced mode operation and delivers excellent efficiency with low conduction and switching losses.
The device is housed in a compact 8-pin SO-8 surface-mount package measuring 5 mm in length, 6.2 mm in width, and 1.75 mm in height. Its low maximum drain-source resistance of 22 milliohms minimizes power loss during operation. The MOSFET exhibits a maximum gate-source voltage rating of 20 V and a typical gate charge of 34 nC, making it suitable for fast switching applications.
Operating reliably over a temperature range from -55°C up to 150°C, the SI4896DY-T1-E3 is ideal for usage in demanding industrial and consumer electronics environments. Its power dissipation capability of 1.56 W supports effective heat management when mounted on appropriate PCB layouts.
The device is lead-free and halogen-free, meeting environmental compliance standards for modern electronic manufacturing. TrenchFET power MOSFET technology for reduced conduction and switching losses. Continuous drain current of 9.5 A with a drain-source voltage of 80 V.
8-pin SO-8 surface mount package for compact PCB design. Wide operating temperature range from -55°C to 150°C. Low gate charge of 34 nC for efficient switching. Power dissipation of 1.56 W for thermal stability. Lead and halogen free, meeting environmental standards.
Applications in adaptor switching and load switching circuits.
This Vishay TrenchFET MOSFET is suitable for industrial, consumer electronics, power management, and automotive electronics applications. Explore more power Semiconductor devices and MOSFETs in the Electronics & Electricals category at EnvMart.
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Frequently Asked Questions
The maximum continuous drain current for the Vishay SI4896DY-T1-E3 is 9.5 A.
This model has a drain-source voltage rating of 80 V.
The maximum gate-source voltage for the SI4896DY-T1-E3 is 20 V.
The typical gate charge of this MOSFET is 34 nC.
The SO-8 package dimensions are 5 mm in length, 6.2 mm in width, and 1.75 mm in height.
The maximum power dissipation capability of this model is 1.56 W.
It operates reliably over a temperature range from -55°C to 150°C.
The maximum drain-source resistance for this device is 22 milliohms.
This model uses a surface mount type for PCB integration.
This MOSFET is suitable for applications in adaptor switching and load switching circuits.
The device is lead-free and halogen-free, meeting environmental compliance standards.
This model belongs to the TrenchFET series of MOSFETs.
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