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Toshiba U-MOSVIII-H N-Channel MOSFET 263 A 60 V Enhancement 3-Pin TO-220 TK100E06N1,S1X(S

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Toshiba U-MOSVIII-H N-Channel MOSFET 263 A 60 V Enhancement 3-Pin TO-220 TK100E06N1,S1X(S

Name: Toshiba U-MOSVIII-H N-Channel MOSFET 263 A 60 V Enhancement 3-Pin TO-220 TK100E06N1,S1X(S
Brand: Toshiba
SKU: 197229
Price: 2.5 USD
Availability: InStock

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Category MOSFET Brand Toshiba Condition New

Specifications

Country of Origin	Japan
Brand	Toshiba
Height	15.1mm
Length	10.16mm
Model	TK100E06N1,S1X(S
Width	4.45mm
Mount Type	Through Hole
Series	U-MOSVIII-H
Maximum Operating Temperature	150°C
Package Type	TO-220
Pin Count	3
Channel Type	N
Maximum Continuous Drain Current Id	263A
Maximum Drain Source Voltage Vds	60V
Maximum Drain Source Resistance Rds	2.3mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	255W
Typical Gate Charge Qg @ Vgs	140nC
Maximum Gate Source Voltage Vgs	-20, +20V
Forward Voltage Vf	-1.2V

Key Features

The MOSFET operates in enhancement channel mode with an N-type channel.
Features a low maximum drain-source resistance of 2.3 milliohms for efficient conduction.
Typical gate charge at Vgs is 140 nanocoulombs to ensure switching performance.
The device supports a maximum power dissipation of 255 watts for robust thermal handling.
Maximum gate-source voltage ratings are -20 V and +20 V for operational safety.
Forward voltage is -1.2 V, optimizing voltage drop across the MOSFET.
Designed to operate up to temperatures of 150 degrees Celsius.
The compact dimensions include 10.16 mm length, 15.1 mm height, and 4.45 mm width.

Product Description

Toshiba TK100E06N1,S1X(S N-Channel MOSFET is a highly efficient semiconductor component designed to handle a maximum continuous drain current of 263 amperes. Offered in a durable TO-220 package with three pins for easy through-hole mounting, this U-MOSVIII-H series device provides reliable performance for power electronics applications.

The MOSFET uses an enhancement mode N-type channel providing low resistance conduction with a maximum drain-source resistance of only 2.3 milliohms. Its typical gate charge of 140 nanocoulombs ensures swift switching capabilities making it ideal for power supply circuits, motor drives, and industrial control systems.

Rated for a maximum drain-source voltage of 60 volts and capable of dissipating 255 watts of power, this transistor is suitable for demanding thermal environments up to 150°C. The maximum gate-source voltage of ±20 V safeguards device integrity during operation.

Physically, the device features a compact form factor measuring 10.16 mm length, 15.1 mm height, and 4.45 mm width, enabling space-saving integration in electronic assemblies. The TO-220 package facilitates efficient heat dissipation and mechanical stability.

Manufactured in Japan, this MOSFET meets stringent quality criteria but does not have specific certifications or automotive standards. It is commonly applied in industrial power management, electronic component design, laboratory equipment, and manufacturing process controls.

The MOSFET operates with an N-channel enhancement mode device configuration. Its continuous drain current of 263 A supports high power demands. Low on-resistance enhances system efficiency and reduces thermal losses. Compact TO-220 package and through-hole mount type ensure robust installation.

Designed for operation in temperatures up to 150°C. Suitable for power electronics, motor control, and industrial automation.

This Toshiba MOSFET is available through EnvMart’s Electronics & Electricals category, specializing in Semiconductor components that meet high industrial standards. Explore our extensive catalog for related discrete semiconductor devices and electronic components.