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onsemi 600 V 8 A Switching Diode Through Hole Package TO-220AC MUR860G

Category Schottky Diodes & Rectifiers Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 9.27mm
Length 10.29mm
Model MUR860G
Width 4.82mm
Mount Type Through Hole
Maximum Operating Temperature 175°C
Package Type TO-220AC
Minimum Operating Temperature -65°C
Pin Count 2
Automotive Standard AEC-Q101
Maximum Continuous Forward Current If 8A
Peak Reverse Repetitive Voltage Vrrm 600V
Diode Configuration Single
Rectifier Type Switching
Peak Reverse Current Ir 10μA
Peak Non-Repetitive Forward Surge Current Ifsm 100A
Maximum Forward Voltage Vf 1.5V
Peak Reverse Recovery Time trr 60ns
Infineon Silicon Diode, Single, 7.5 A, 2-Pin 650 V TO-220 IDV15E65D2XKSA1Brand Infineon
Rectifier diode,MUR860 8A 600VBrand ON Semiconductor

Key Features

  • Designed for through hole mounting applications.
  • Maximum forward voltage of 1.5 V ensures efficient conduction.
  • Peak reverse repetitive voltage rating of 600 V for reliable performance.
  • Fast peak reverse recovery time of 60 nanoseconds improves switching efficiency.
  • Supports peak non-repetitive forward surge current up to 100 A.
  • Wide operating temperature range from -65°C to 175°C for diverse environments.
  • Pin count of 2 supports simple diode configuration in circuit design.
  • Automotive grade AEC-Q101 qualified for automotive electronics applications.

Product Description

onsemi MUR860G is a high-reliability switching diode designed for power semiconductor applications requiring 600 V peak reverse voltage and 8 A maximum continuous forward current. It is housed in a TO-220AC through hole package, which facilitates ease of mounting and thermal management in industrial and automotive designs.

This single diode configuration is optimized for switching and rectifying purposes in power management circuits, ensuring low forward voltage drop of 1.5 V and fast recovery characteristics with a peak reverse recovery time of 60 nanoseconds, essential for high-frequency switching applications.

The diode supports a peak non-repetitive forward surge current of 100 A, making it robust against transient overload conditions. Its wide operating temperature range from -65°C to 175°C makes it suitable for rigorous industrial, automotive, and commercial environments.

Physical package dimensions include a length of 10.29 mm, width of 4.82 mm, and height of 9.27 mm, making it compact for integration in dense PCB layouts. The 2-pin design enables straightforward circuit integration and soldering.

Moreover, onsemi MUR860G meets the stringent AEC-Q101 automotive qualification standards, ensuring reliability and durability for automotive electronic systems. Designed for through hole mounting in power electronic circuits.

Ensures efficient switching with low forward voltage and fast recovery time. Supports high surge current to withstand transient conditions. Wide operating temperature expands application versatility. Compact TO-220AC package helps with thermal dissipation.

Ideal for automotive and industrial semiconductor switching needs. Single diode configuration with 2 pins for simplified use. Qualified to automotive AEC-Q101 standard for enhanced reliability.

The MUR860G diode is a dependable choice suited for industrial assemblies, automotive systems, power supplies, and energy management circuits. Its proven performance and standard package deliver efficient and durable rectification and switching for a variety of electronics applications.

Explore additional onsemi semiconductor devices and product lines to meet your design requirements with confidence on EnvMart.

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onsemi 600 V 8 A Switching Diode Through Hole Package TO-220AC MUR860G
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Frequently Asked Questions

The MUR860G has a maximum continuous forward current rating of 8 A.

It has a peak reverse repetitive voltage rating of 600 V, ensuring reliable performance in high-voltage applications.

This model is housed in a TO-220AC through hole package, which facilitates ease of mounting and thermal management.

The MUR860G supports a peak non-repetitive forward surge current of up to 100 A.

It has a maximum forward voltage drop of 1.5 V, which ensures efficient conduction.

The diode operates within a wide temperature range from -65°C to 175°C, making it suitable for diverse environments.

It features a fast peak reverse recovery time of 60 nanoseconds, which improves switching efficiency.

This model has a pin count of 2, supporting a simple diode configuration in circuit design.

Yes, it is qualified to the AEC-Q101 automotive standard, ensuring reliability for automotive electronic systems.

The dimensions of this diode are 9.27 mm in height and 4.82 mm in width.

It is designed as a single diode configuration, optimized for switching and rectifying purposes in power management circuits.

The country of origin for the MUR860G is India.

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