onsemi N-Channel MOSFET 115 mA 60 V Enhancement 3-Pin SOT-23 2N7002LT1G

onsemi 2N7002LT1G is a discrete N-Channel Power MOSFET in a surface mount SOT-23 package designed for low power and switching applications. It supports a maximum continuous drain current of 115 mA and withstands a maximum drain source voltage of 60 V, making it ideal for compact power management and switching circuits.

This MOSFET utilizes enhancement mode channel technology, providing efficient switching characteristics suitable for industrial, consumer electronics, and embedded device applications. Its compact 3-pin SOT-23 form factor allows for efficient PCB layout, reducing space and weight.

The device features a maximum power dissipation of 300 mW and can operate reliably under ambient temperatures from -55°C up to 150°C, supporting demanding environments and extended temperature ranges commonly found in industrial and automotive electronics.

Electrical characteristics include a maximum drain source resistance (Rds) of 7.5 Ω and a maximum gate source voltage range of -20 V to +20 V, enabling precise control and minimizing power loss. The typical gate charge of 160 nC at the gate-source voltage enhances high-speed switching capability while maintaining low switching losses.

Physical dimensions are optimized for space-saving designs with length of 2.9 mm, width of 1.3 mm, and height of 940 µm. The forward voltage drop is typically 1.2 V, favoring efficient conduction in switching circuits.

Designed with enhancement mode channel for efficient switching. Maximum power dissipation of 300 mW supports compact circuit designs. Surface mount package (SOT-23) simplifies PCB assembly for high-density layouts. Robust operation from -55°C to 150°C accommodates diverse temperature environments.

Maximum drain source resistance of 7.5 Ω ensures low conduction losses. Maximum gate source voltage ranges between -20 V and +20 V for reliable gate control. Typical gate charge of 160 nC at Vgs aids in fast switching applications.

Compact physical dimensions: 2.9 mm length, 1.3 mm width, and 940 µm height. Forward voltage typically 1.2 V for efficient conduction. This N-Channel MOSFET is suitable for various industrial, laboratory, and electronic power management systems requiring reliable and efficient power switching.

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