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onsemi PNP Power Transistor, 8 A, 150 V, TO-220 Package, 3-Pin, Through Hole MJE15031G

Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 30.02mm
Length 10.53mm
Model MJE15031G
Width 4.83mm
Mount Type Through Hole
Series MJE15031
Maximum Operating Temperature 150°C
Package Type TO-220
Minimum Operating Temperature -65°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo -150V
Minimum DC Current Gain hFE 20
Transistor Polarity PNP
Maximum Emitter Base Voltage VEBO 5V
Maximum Collector Base Voltage VCBO 150V
Maximum Power Dissipation Pd 50W
Maximum DC Collector Current Idc -8A
Transistor Configuration Single
Maximum Transition Frequency ft 30MHz

Key Features

  • Rated maximum DC collector current of 8 amperes.
  • Supports maximum collector-emitter voltage of 150 volts.
  • Power dissipation capability up to 50 watts.
  • Operating temperature range from -65°C to 150°C suitable for industrial applications.
  • Single transistor configuration with PNP polarity.
  • Minimum DC current gain (hFE) of 20 ensures amplification efficiency.
  • Transition frequency of 30 MHz for medium-frequency applications.
  • Pin count is 3, compatible with typical through-hole mounting style.

Product Description

onsemi MJE15031G is a robust PNP power transistor offering a maximum collector current of 8 A and collector-emitter voltage rating of 150 V. Encased in a durable TO-220 package with three pins for easy through-hole mounting, this transistor is designed for reliable switching and amplification in various electronic circuits.

This transistor features a maximum power dissipation of 50 W, enabling it to efficiently handle high power loads while maintaining thermal stability. Its minimum DC current gain (hFE) of 20 and transition frequency of 30 MHz make it well-suited for medium-frequency switching applications.

The operational temperature range from -65°C to 150°C ensures dependable performance under harsh environmental conditions typical in industrial, power supply, and electronic manufacturing settings. With a width of 4.83 mm, height of 30.02 mm, and length of 10.53 mm, the compact form factor facilitates integration into densely populated printed circuit boards (PCBs).

The transistor is configured as a single PNP device, optimized for use in power applications requiring medium current and voltage ratings. Its pin count of three corresponds to standard transistor terminal connections: base, collector, and emitter, simplifying implementation.

While this model does not hold automotive certifications, it is widely applicable in general-purpose electronic component applications, power converters, and amplifiers across industrial and laboratory contexts.

Rated maximum DC collector current of 8 amperes. Maximum collector-emitter voltage rating of 150 volts. TO-220 3-pin package with through-hole mount. Power dissipation capacity of 50 watts. Operating temperature range from -65°C to 150°C.

Minimum DC current gain of 20 for effective signal amplification. Transition frequency of 30 MHz suitable for moderate frequency circuits. Compact physical dimensions enable easy circuit board integration. Designed for industrial, power supply, and electronic manufacturing applications.

Single PNP transistor configuration. Explore a wide range of Bipolar Transistors and power transistors in EnvMart's Electronics & Electricals category for your project and design needs.

onsemi PNP Power Transistor, 8 A, 150 V, TO-220 Package, 3-Pin, Through Hole MJE15031G
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