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onsemi Small Signal NPN Transistor 100 mA 65 V 3-Pin SOT-23 BC846BLT1G

Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 1.11mm
Length 3.04mm
Model BC846BLT1G
Width 1.4mm
Mount Type Surface
Series BC846BL
Maximum Operating Temperature 150°C
Package Type SOT-23
Minimum Operating Temperature -55°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo 65V
Minimum DC Current Gain hFE 110
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 6V
Maximum Collector Base Voltage VCBO 80V
Automotive Standard AEC-Q101
Maximum Power Dissipation Pd 300mW
Maximum DC Collector Current Idc 100mA
Transistor Configuration Single
Maximum Transition Frequency ft 100MHz
Infineon BC846B NPN Bipolar Transistor, 100 mA, 65 V, 3-Pin SOT-23Brand Infineon
ON NPN transistor,BC846B 0.1A Ic 5VceBrand ON Semiconductor

Key Features

  • This transistor supports a maximum DC collector current of 100 mA.
  • It has a maximum collector-emitter voltage rating of 65 V.
  • The package type is SOT-23 suitable for surface mount applications.
  • Maximum power dissipation is rated at 300 mW for reliable operation.
  • The transistor features a minimum DC current gain (hFE) of 110.
  • It supports a maximum transition frequency (ft) of 100 MHz.
  • Operating temperature ranges from -55°C to 150°C.
  • Complies with automotive standard AEC-Q101 for automotive applications.

Product Description

onsemi BC846BLT1G is a small signal NPN bipolar transistor designed for low power amplification and switching applications. It supports a maximum DC collector current of 100 mA and a maximum collector-emitter voltage of 65 V ensuring robust performance under varying circuit conditions. This transistor is housed in a 3-pin SOT-23 package allowing surface mounting on compact printed circuit boards.

The device offers a minimum DC current gain (hFE) of 110 and a maximum transition frequency of 100 MHz, making it suitable for high-frequency analog and switching circuits. The transistor can operate reliably in the temperature range from -55°C to 150°C and has a power dissipation rating of 300 mW.

Designed to meet the automotive AEC-Q101 standard, the BC846BLT1G transistor is suitable for industrial, automotive, and commercial electronic applications requiring small signal amplification. Its compact size with dimensions of 3.04 mm length, 1.4 mm width, and 1.11 mm height makes it ideal for densely packed circuit designs.

This transistor supports a maximum DC collector current of 100 mA. Maximum collector-emitter voltage rating is 65 V. Encapsulated in a 3-pin SOT-23 surface-mount package. Power dissipation is rated at 300 mW for stable operation.

Minimum DC current gain (hFE) of 110 ensures amplification efficiency. Maximum transition frequency (ft) of 100 MHz suitable for switching applications. Operating temperature range covers -55°C to 150°C. Meets automotive standard AEC-Q101.

Compact physical dimensions for space saving design. Ideal for automotive, industrial, and electronic circuits requiring reliable small signal transistors. Explore our wide range of Bipolar Transistors and semiconductor components to find compatible parts for your industrial or automotive electronics projects at EnvMart.

onsemi Small Signal NPN Transistor 100 mA 65 V 3-Pin SOT-23 BC846BLT1G
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Frequently Asked Questions

The maximum DC collector current for this transistor is 100 mA.

The maximum collector-emitter voltage rating is 65 V.

This model is housed in a 3-pin SOT-23 package, suitable for surface mounting applications.

The maximum power dissipation rating is 300 mW, ensuring stable operation.

The minimum DC current gain (hFE) is 110, which supports amplification efficiency.

The maximum transition frequency (ft) is 100 MHz, making it suitable for high-frequency applications.

It operates reliably within a temperature range of -55°C to 150°C.

This model complies with the automotive standard AEC-Q101, making it suitable for automotive applications.

The dimensions are 3.04 mm in length, 1.4 mm in width, and 1.11 mm in height.

It is a small signal NPN bipolar transistor, designed for low power amplification and switching applications.

The maximum emitter-base voltage (VEBO) is 6 V.

The maximum collector-base voltage (VCBO) is 80 V.

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