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Infineon HEXFET N-Channel MOSFET 36 A 100 V Enhancement 3-Pin TO-220 IRF540ZPBF

Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin China
Brand Infineon
Height 8.77mm
Length 10.54mm
Model IRF540ZPBF
Width 4.69mm
Mount Type Through Hole
Series HEXFET
Maximum Operating Temperature 175°C
Package Type TO-220
Minimum Operating Temperature -55°C
Pin Count 3
Channel Type N
Maximum Continuous Drain Current Id 36A
Maximum Drain Source Voltage Vds 100V
Maximum Drain Source Resistance Rds 27mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 92W
Typical Gate Charge Qg @ Vgs 42nC
Maximum Gate Source Voltage Vgs -20, +20V
Forward Voltage Vf 1.3V
N-Channel MOSFET, 36 A, 100 V, 3-Pin TO-220AB Infineon IRF540ZPBFBrand Infineon

Key Features

  • Utilizes HEXFET technology for enhanced efficiency and fast switching.
  • Supports enhancement mode operation with low on-resistance of 27 milliohms.
  • Maximum power dissipation rated at 92 watts ensuring reliable thermal management.
  • Designed for motor control, power management, and switching power supplies.
  • Operates reliably between -55°C to 175°C maximum operating temperature.
  • Through hole mount type with a compact form factor of 10.54x8.77x4.69 mm (LxHxW).
  • Capable of handling repetitive avalanche conditions for robustness in industrial applications.
  • Typical gate charge of 42 nC at rated gate voltage enhances switching performance.

Product Description

Infineon IRF540ZPBF is a HEXFET Series N-Channel MOSFET designed for high performance in industrial and automotive electronic applications. It supports a maximum continuous drain current of 36 A and a drain-source voltage up to 100 V, packaged in a durable TO-220 case to ensure effective heat dissipation and mechanical stability.

This device features a low drain-source resistance (Rds(on)) of 27 milliohms and an enhancement mode channel, which significantly reduce conduction losses and improve efficiency. Its maximum power dissipation of 92 W and high operating temperature tolerance of up to 175°C make it suitable for demanding environments including motor controls, power management systems, switching supplies, converters, and industrial automation.

The IRF540ZPBF's typical gate charge of 42 nC at the rated gate-source voltage enables fast switching speeds, enhancing operational performance in high-frequency applications. Its through-hole mounting with a 3-pin TO-220 package offers easy integration with existing designs.

This MOSFET is particularly effective in automotive and industrial sectors requiring reliable and efficient electronic components capable of repetitive avalanche handling and sustained high currents.

Utilizes HEXFET technology for efficiency and minimal power loss. Low Rds(on) for improved thermal management and energy savings. High power dissipation supports operation under heavy electrical loads. Wide operating temperature range for resilience in harsh conditions.

Standard 3-pin TO-220 package ensures compatibility with various mounting needs. Fast switching characteristics enhance performance in power supply applications. Robust design suitable for repetitive avalanche conditions.

Compact dimensions: Length 10.54 mm, Height 8.77 mm, Width 4.69 mm.

This component is ideal for integration in industrial, automotive, electronics manufacturing, and power management applications. Through its proven technology and specifications, the IRF540ZPBF ensures reliability, efficiency, and consistency essential for today's advanced electrical systems.

Explore other semiconductor devices and MOSFET options in the Electronics & Electricals category at EnvMart for comprehensive solutions.

Infineon HEXFET N-Channel MOSFET 36 A 100 V Enhancement 3-Pin TO-220 IRF540ZPBF
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Frequently Asked Questions

The maximum continuous drain current for this model is 36 A.

It has a maximum drain-source voltage rating of 100 V.

The maximum power dissipation rated for the IRF540ZPBF is 92 watts.

This model features a low drain-source resistance (Rds(on)) of 27 milliohms.

The typical gate charge at the rated gate-source voltage is 42 nC.

It operates reliably between -55°C to 175°C.

This model uses a through-hole mount type in a TO-220 package.

The dimensions are 10.54 mm in length, 8.77 mm in height, and 4.69 mm in width.

It is designed for applications including motor control, power management, and switching power supplies.

The IRF540ZPBF comes in a TO-220 package type.

This model features an N-channel configuration.

The maximum gate-source voltage is rated at -20 to +20 V.

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