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Infineon OptiMOS N-Channel MOSFET 100 V, 1.2 A Continuous Drain Current, Enhancement Mode, 4-Pin SOT-223 BSP296NH6327XTSA1

Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin China
Brand Infineon
Height 1.6mm
Length 6.5mm
Model BSP296NH6327XTSA1
Width 3.5mm
Mount Type Surface
Series OptiMOS
Maximum Operating Temperature 150°C
Package Type SOT-223
Minimum Operating Temperature -55°C
Pin Count 4
Automotive Standard AEC-Q101
Channel Type N
Maximum Continuous Drain Current Id 1.2A
Maximum Drain Source Voltage Vds 100V
Maximum Drain Source Resistance Rds 800mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 1.8W
Typical Gate Charge Qg @ Vgs 4.5nC
Maximum Gate Source Voltage Vgs -20, +20V
Forward Voltage Vf 0.85V

Key Features

  • The 100 V maximum drain-source voltage enables high-voltage switching applications.
  • A continuous drain current of 1.2 A supports moderate load handling.
  • The 800 milliohm maximum drain-source resistance reduces conduction losses.
  • Typical gate charge of 4.5 nanocoulombs allows fast switching transitions.
  • Maximum power dissipation of 1.8 W helps manage thermal performance.
  • Operates reliably in temperatures from -55 °C up to 150 °C.
  • The device is compliant with automotive standard AEC-Q101.
  • Gate-source voltage maximum tolerance of ±20 V protects the gate oxide.

Product Description

Infineon BSP296NH6327XTSA1 OptiMOS N-Channel Enhancement Mode MOSFET is designed for applications requiring reliable switching and control in automotive and industrial environments. Its 100 V drain-source rating and 1.2 A continuous current capacity make it suitable for compact power regulation and control systems.

Featuring a surface-mount 4-pin SOT-223 package, it supports efficient thermal conduction and a straightforward footprint for PCB integration. The 800 mΩ typical drain-source resistance minimizes power losses during operation, while the typical gate charge of 4.5 nC enables fast and efficient switching, improving efficiency in PWM applications.

This MOSFET can operate across a broad ambient temperature range from -55 °C to 150 °C and dissipates up to 1.8 W, ensuring durability under fluctuating thermal conditions encountered in automotive control systems, DC/DC converters, and battery management circuits.

AEC-Q101 qualification guarantees its suitability for automotive use cases including control modules, low-power motor drivers, and power distribution networks. Its ±20 V gate-source voltage rating requires appropriate gate drive design to protect the gate oxide layer.

The 100 V drain-source voltage rating is suited to switching high-voltage loads efficiently. The 1.2 A continuous current capability supports moderate load requirements. Surface-mount SOT-223 package enables compact PCB layouts with effective heat dissipation.

Low 800 milliohm drain-source resistance reduces energy loss during conduction. Fast switching supported by a low gate charge of 4.5 nC, beneficial in PWM circuits. Wide operating temperature range from -55 °C to 150 °C for demanding environmental conditions.

AEC-Q101 automotive standard certification ensures reliability in automotive applications. Maximum gate-source voltage tolerance of ±20 V protects gate integrity during operation.

This product is ideal for use in automotive control modules, compact DC/DC power converters, battery management systems, and other industrial electronic controls requiring efficient switching and moderate current capacity. Integration into embedded and portable equipment benefits from the robust thermal and electrical ratings.

Explore similar MOSFETs and other semiconductor solutions in the Electronics & Electricals category at EnvMart.

Infineon OptiMOS N-Channel MOSFET 100 V, 1.2 A Continuous Drain Current, Enhancement Mode, 4-Pin SOT-223 BSP296NH6327XTSA1
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Frequently Asked Questions

The maximum drain-source voltage of this model is 100 V, making it suitable for high-voltage switching applications.

It has a continuous drain current rating of 1.2 A, which supports moderate load handling in various applications.

The maximum power dissipation is 1.8 W, which helps manage thermal performance during operation.

The typical gate charge is 4.5 nanocoulombs, allowing for fast switching transitions, particularly beneficial in PWM applications.

The dimensions of the SOT-223 package are 6.5 mm in length, 3.5 mm in width, and 1.6 mm in height.

This MOSFET operates reliably within a temperature range from -55 °C to 150 °C, suitable for demanding environments.

The maximum gate-source voltage tolerance is ±20 V, which protects the gate oxide during operation.

Yes, it is compliant with the automotive standard AEC-Q101, ensuring its reliability for automotive applications.

The typical drain-source resistance is 800 milliohm, which reduces conduction losses during operation.

It supports surface mounting, which facilitates efficient thermal conduction and compact PCB layouts.

This MOSFET is suitable for applications such as automotive control modules, DC/DC converters, and battery management systems.

The SOT-223 package has 4 pins, which are used for electrical connections in the circuit.

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