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Infineon OptiMOS 5 Type N-Channel MOSFET 112A 150V Enhancement 3-Pin TO-220 IPP076N15N5AKSA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 4.4mm |
| Length | 10.2mm |
| Model | IPP076N15N5AKSA1 |
| Width | 15.93mm |
| Mount Type | Through Hole |
| Series | OptiMOS 5 |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 112A |
| Maximum Drain Source Voltage Vds | 150V |
| Maximum Drain Source Resistance Rds | 7.6mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 214W |
| Typical Gate Charge Qg @ Vgs | 49nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.1V |
Key Features
- Designed with OptiMOS 5 technology for enhanced performance.
- Maximum power dissipation capability of 214 watts for demanding applications.
- Low on-resistance (7.6 milliohms) ensures minimal conduction losses.
- Operates in harsh environments with temperatures ranging from -55°C to 175°C.
- Features an inherently rugged body diode for reliability.
- Integrates RG for reduced MOSFET oscillation sensitivity.
- Typical gate charge of 49 nanocoulombs facilitates fast switching.
- Forward voltage drop is 1.1 volts improving efficiency.
Product Description
Infineon IPP076N15N5AKSA1 is a high-performance Type N-Channel MOSFET designed for industrial and power electronics applications. Featuring OptiMOS 5 technology, this transistor offers high continuous drain current capacity of 112 amperes and maximum drain-source voltage of 150 volts in a reliable 3-Pin TO-220 package. The device achieves best-in-class on-resistance of 7.6 milliohms and a low typical gate charge of 49 nanocoulombs, ensuring high efficiency and minimal switching losses.
Suitable for demanding environments, the MOSFET supports a wide operating temperature range from -55°C up to 175°C. Its rugged body diode enhances durability, while the integrated gate resistance helps reduce oscillation sensitivity during switching cycles. Forward voltage drop is managed efficiently at 1.1 volts, further minimizing power dissipation and improving system reliability.
The device is intended for through-hole PCB mounting, ensuring mechanical robustness and ease of assembly in industrial, automotive, and power management circuits. This MOSFET is ideal for power switching, motor control, and DC-DC conversion applications where robust high current and voltage handling are essential.
High continuous drain current rating of 112 amperes. Maximum drain-source voltage of 150 volts. Low on-resistance of 7.6 milliohms reduces conduction losses. OptiMOS 5 technology enhances switching efficiency. Wide operating temperature range ensures reliability.
3-Pin TO-220 package for standard through-hole mounting. Integrated gate resistance minimizes oscillation. Rugged body diode for enhanced durability. Typical gate charge of 49 nanocoulombs supports fast switching. Forward voltage of 1.1 volts improves energy efficiency.
This product is designed for use in industrial power electronics, automotive electronics, and high-efficiency power supply circuits. Using Infineon’s OptiMOS 5 technology, it balances high power capacity with ease of design integration.
Explore related MOSFET products and power management solutions in the Electronics & Electricals category on EnvMart for comprehensive component sourcing.
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Frequently Asked Questions
The maximum continuous drain current for this model is 112 amperes.
It can handle a maximum drain-source voltage of 150 volts.
This MOSFET features a low on-resistance of 7.6 milliohms, which helps reduce conduction losses.
The operating temperature range for this device is from -55°C to 175°C.
The typical gate charge for this model is 49 nanocoulombs, facilitating fast switching.
The forward voltage drop is 1.1 volts, which improves energy efficiency.
This model is designed for through-hole mounting, ensuring mechanical robustness.
The package type is TO-220, which is a standard for many power electronics applications.
It has a maximum power dissipation capability of 214 watts.
It features a rugged body diode and integrated gate resistance to enhance reliability and reduce oscillation sensitivity.
This model is suitable for industrial power electronics, automotive electronics, and high-efficiency power supply circuits.
The dimensions are as follows: height is 4.4 mm, length is 10.2 mm, and width is 15.93 mm.
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