Infineon HEXFET N-Channel MOSFET 60 V 55 A Enhancement Mode 3-Pin TO-220 IRFZ44VPBF

Infineon IRFZ44VPBF HEXFET N-Channel MOSFET is a high-performance discrete semiconductor device optimized for power switching applications. This enhancement-mode transistor, housed in a robust 3-pin TO-220 package, offers a maximum continuous drain current of 55 A and a maximum drain-source voltage of 60 V, making it suitable for demanding industrial and commercial electronics.

The device's low conduction losses, owing to a maximum drain-source resistance of 17 mΩ, provide improved system efficiency in a variety of electronic designs. The enhancement channel type ensures reliable switching and control. It tolerates a maximum gate-source voltage of -20 V to +20 V, enabling compatibility with a broad range of drive voltages.

With a typical gate charge of 67 nC at the specified gate-source voltage, the IRFZ44VPBF supports efficient gate control and fast switching speeds. Its maximum power dissipation capability of 115 W and an extended operating temperature range from -55°C to 175°C enable usage in harsh and thermally challenging environments.

The compact dimensions of 10.67 mm length, 4.83 mm width, and 8.77 mm height facilitate integration into standard through-hole circuit boards. This MOSFET is suitable for applications in industrial power management, automotive electronics, and general-purpose power switching.

Supports 55 A continuous current for heavy-duty switching. Operates reliably up to 175°C ambient temperature. TO-220 package for robust mounting and heat dissipation. Low on-resistance (17 mΩ) enables efficient conduction.

Wide gate voltage range enhances driver flexibility. High power dissipation of 115 W for demanding applications. Compact form factor for versatile electronic layouts. Explore the Infineon MOSFET range on EnvMart for advanced electronic component solutions tailored to your industrial, laboratory, and commercial power management needs.