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Vishay N-Channel MOSFET 11 A 500 V Enhancement 3-Pin TO-247 IRFP448PBF
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Height | 20.7mm |
| Length | 15.87mm |
| Model | IRFP448PBF |
| Width | 5.31mm |
| Mount Type | Through Hole |
| Series | IRFP448 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 11A |
| Maximum Drain Source Voltage Vds | 500V |
| Maximum Drain Source Resistance Rds | 600mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 180W |
| Typical Gate Charge Qg @ Vgs | 84nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.7V |
| N-channel MOSFET,IRFP448 11A 500VBrand | Vishay |
Key Features
- The enhancement mode channel ensures efficient switching performance.
- Maximum power dissipation is rated at 180 W.
- Typical gate charge at Vgs is 84 nC for precise gate control.
- Maximum drain-source resistance is low at 600 mΩ for minimal losses.
- Operates from -55°C minimum to 150°C maximum temperature.
- Gate-source voltage range spans -20 V to +20 V for safe operation.
- The forward voltage drop is approximately 1.7 V.
Product Description
Vishay IRFP448PBF is a high-performance N-Channel enhancement mode MOSFET designed for applications requiring reliable switching with a maximum continuous drain current of 11 A and a drain-source voltage rating of 500 V. Packaged in a TO-247 format with three pins, this MOSFET is suitable for through-hole mounting on various industrial and electronic equipment.
This device features a low maximum drain-source resistance of 600 mΩ, which minimizes power losses and improves efficiency in power management circuits. The maximum power dissipation of 180 W allows it to handle high load conditions while maintaining operational stability.
The typical gate charge of 84 nC at Vgs ensures precise and responsive gate control, which is critical for fast-switching power electronics. It operates safely within the gate-source voltage limits of -20 V to +20 V, providing robustness against voltage spikes.
Thermal performance is reliable over a wide temperature range from -55°C to a maximum operating temperature of 150°C, ensuring durability in harsh environments such as industrial automation, power supplies, and motor control systems.
The compact physical dimensions of height 20.7 mm, length 15.87 mm, and width 5.31 mm make it compatible with constrained PCB layouts without sacrificing performance. The enhancement mode channel provides efficient on/off switching.
High maximum continuous drain current of 11 A for power demanding applications. Drain-source voltage capability up to 500 V ensures safe operation in high voltage circuits. Low drain-source resistance reduces conduction losses.
Wide operating temperature range from -55°C to 150°C supports industrial-grade applications. Compact TO-247 package enables through-hole mounting ease. Reliable power dissipation up to 180 W. Typical gate charge supports effective switching control.
This MOSFET is ideal for industrial, automation, HVAC, and power management applications requiring robust and efficient semiconductor switches. Its TO-247 package accommodates heat sinking for enhanced thermal performance. Users can download technical documents, 3D models, and footprints from Vishay resources to integrate this MOSFET into custom designs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 11 A.
It has a maximum drain-source voltage rating of 500 V.
The typical gate charge at Vgs is 84 nC, which allows for precise gate control.
The maximum power dissipation is rated at 180 W, allowing it to handle high load conditions.
The maximum drain-source resistance is low at 600 mΩ, which minimizes power losses.
This MOSFET operates within a temperature range of -55°C to 150°C.
It is packaged in a TO-247 format, suitable for through-hole mounting.
The gate-source voltage range spans from -20 V to +20 V, ensuring safe operation.
The dimensions are height 20.7 mm, length 15.87 mm, and width 5.31 mm.
It features an N-channel enhancement mode, which provides efficient on/off switching.
This model is suitable for applications in industrial automation, power supplies, and motor control systems.
The country of origin for this MOSFET is India.
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