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Infineon HEXFET N-Channel MOSFET 20 A 100 V Enhancement Mode 3-Pin TO-220 IRFI540NPBF
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 8.9mm |
| Length | 10.63mm |
| Model | IRFI540NPBF |
| Width | 4.83mm |
| Mount Type | Through Hole |
| Series | HEXFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 20A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 52mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 54W |
| Typical Gate Charge Qg @ Vgs | 94nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.3V |
| N-isolated MOSFET,IRFI540N 20A 100VBrand | International Rectifier |
Key Features
- Features a low on-resistance of 52 milliohms for efficient power management.
- Capable of dissipating up to 54 watts of power under normal operating conditions.
- Designed for enhancement mode operation with an N-channel configuration.
- Operates effectively within a temperature range from -55°C to 175°C.
- Typical gate charge is 94 nanocoulombs at gate voltage of 10 V.
- Equipped with automotive standard AEC-Q101 certification for robustness.
- Suitable for through-hole mounting to ensure secure and stable connections.
- Ideal for power supplies, automotive systems, motor control, and renewable energy applications.
Product Description
Infineon IRFI540NPBF is a high-performance HEXFET N-Channel MOSFET designed for efficient power management in industrial, automotive, and electronic applications. It supports a continuous drain current of 20 A and withstands voltages up to 100 V. Packaged in a 3-pin TO-220 form factor, it facilitates easy mounting and superior thermal dissipation.
This MOSFET features a low drain-source resistance of 52 milliohms, minimizing conduction losses and optimizing system efficiency. The device operates in enhancement mode, with a typical gate charge of 94 nanocoulombs at 10 V, allowing fast and reliable switching. It endures a broad operating temperature range from -55°C to 175°C, suitable for demanding environments.
The component is suited for multiple applications including power supplies for electronic circuits, automotive power management systems, motor control, and renewable energy power conversion. Its AEC-Q101 automotive standard certification ensures high reliability in automotive and industrial use cases.
Low on-resistance of 52 milliohms reduces energy loss. 54 watts maximum power dissipation for reliable operation. Enhanced switching efficiency with 94 nC gate charge. Wide operating temperature range from -55°C to 175°C.
Compact TO-220 3-pin package for through-hole mounting. Automotive standard AEC-Q101 certified for robustness. Ideal for power management in automotive and industrial applications. Supports high-performance electronic circuit designs.
The Infineon HEXFET series offers essential solutions for power management in modern electronic and industrial sectors, ensuring both efficiency and durability. This IRFI540NPBF MOSFET is part of that portfolio providing reliable switching and amplification functionality tailored to high current and voltage applications.
Explore the comprehensive range of power MOSFETs and discrete semiconductors available at EnvMart for your automotive, industrial, and electronics needs.
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Frequently Asked Questions
The maximum continuous drain current of this model is 20 A.
It can withstand a maximum drain-source voltage of 100 V.
This MOSFET is packaged in a 3-pin TO-220 form factor, suitable for through-hole mounting.
The typical gate charge is 94 nanocoulombs at a gate voltage of 10 V.
It operates effectively within a temperature range from -55°C to 175°C.
The maximum power dissipation is 54 watts under normal operating conditions.
The maximum drain-source resistance is 52 milliohms, which helps minimize conduction losses.
It is equipped with AEC-Q101 certification, ensuring robustness for automotive applications.
This model is suitable for power supplies, automotive systems, motor control, and renewable energy applications.
The dimensions are 10.63 mm in length, 4.83 mm in width, and 8.9 mm in height.
This MOSFET features an N-channel configuration designed for enhancement mode operation.
The maximum gate-source voltage is -20 V to +20 V.
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