$0.70
$0.68
Tax included
Previous
Next
Share
Free Delivery in India | Lowest Global Shipping Charges
24/7 Customer Support
Shop with confidence knowing that our 24/7 Customer Support is always available to assist with any inquiries
Save up to 28% with GST Input
Avail maximum benefits from input tax mechanism on all your Business Invoices. Get GST Invoices on your business purchases. And 0% Taxes on all worldwide deliveries
# Lowest Price Challenge
If you find this product anywhere at lower cost than us. Call us and we will not only match the price but also give a complimentary coupon
100% Original Products
Shop with assurance, as each product we offer is 100% original, ensuring quality and authenticity with every purchase
Infineon HEXFET N-Channel MOSFET 9.4 A 100 V Enhancement Mode 3-Pin IPAK IRFU120NPBF
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 6.1mm |
| Length | 6.6mm |
| Model | IRFU120NPBF |
| Width | 2.3mm |
| Mount Type | Through Hole |
| Series | HEXFET |
| Maximum Operating Temperature | 175°C |
| Package Type | IPAK |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 9.4A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 210mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 48W |
| Typical Gate Charge Qg @ Vgs | 25nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.3V |
| N-channel MOSFET,IRFU120N 9.3A 100VBrand | International Rectifier |
Key Features
- Features enhancement mode operation for reliable switching control.
- Supports high maximum power dissipation of 48 W for robust applications.
- Low drain-source resistance (Rds) of 210 milliohms reduces power losses.
- Operates reliably across a temperature range from -55°C to 175°C.
- Compact IPAK (TO-251) 3-pin through-hole package for easy integration.
- Typical gate charge of 25 nC at 25 V gate-source voltage for efficient switching.
- Maximum gate-source voltage tolerance from -20 V to +20 V protects device operations.
- Designed for applications in automation, motor control, and renewable energy power conversion.
Product Description
Infineon IRFU120NPBF HEXFET N-Channel MOSFET is a high-performance discrete semiconductor designed to handle continuous drain currents up to 9.4 A and drain-source voltages of 100 V. Packaged in a compact 3-pin IPAK (TO-251) casing, it is intended for use in demanding electronics and electrical power management systems.
This MOSFET operates in enhancement mode, providing normally-off switching operations which enhance circuit stability and prevent undesired current flow during idle states. Its low on-resistance of 210 mΩ minimizes power dissipation and heat generation, making it efficient for high-frequency and high-current applications.
With a maximum power dissipation rating of 48 W and operating temperature limits from -55°C to 175°C, the IRFU120NPBF ensures reliable performance even under harsh environmental conditions. The device's gate can tolerate voltages between -20 V and +20 V, offering robustness against voltage spikes.
This MOSFET is ideal for various industrial and commercial applications including power management in automation systems, motor control circuits for industrial machinery, and power conversion in renewable energy solutions. Its single silicon MOSFET configuration simplifies integration into complex electronic designs.
Enhancement mode operation for stable and efficient switching. High continuous drain current capability ensures robust performance. Low Rds(on) reduces conduction losses and improves efficiency. Wide operating temperature range suits demanding industrial environments.
Compact through-hole IPAK package facilitates easy mounting and replacement. Ideal for power converters, motor drives, and consumer electronics power delivery. Designed to minimize heat dissipation in high-power applications.
Typical gate charge of 25 nC provides fast switching speeds.
It is suitable for use in electronics, industrial manufacturing, HVAC, motor controls, and renewable energy sectors. For additional devices and high-reliability components, browse similar MOSFETs at EnvMart.
Looking to purchase in bulk?
- Purchase item in bulk quantity
- Get best price for your business
Frequently Asked Questions
The maximum continuous drain current for this model is 9.4 A.
It can handle a maximum drain-source voltage of 100 V.
The maximum power dissipation rating for this device is 48 W.
It operates reliably across a temperature range from -55°C to 175°C.
This model is packaged in a compact 3-pin IPAK (TO-251) casing.
The typical gate charge at 25 V gate-source voltage is 25 nC.
The low drain-source resistance (Rds) is 210 milliohms.
It can tolerate a maximum gate-source voltage from -20 V to +20 V.
This model supports through-hole mounting.
It is designed for applications in automation, motor control, and renewable energy power conversion.
The height is 6.1 mm and the width is 2.3 mm.
This model features an N-channel configuration.
Related Products
$0.97
$0.94
-3%
New
Other Products from this brand
$0.70
$0.68
Save 3%
Tax included
Quantity
Global Payments 140+ Countries
Global Shipping Fedex/UPS/DHL/Aramex/
BlueDart/Delhivery/DP World
24/7 Customer Support Email/Chat/Telephonic Support
Comments (0)
Your review appreciation cannot be sent
Report comment
Report sent
Your report cannot be sent