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Infineon HEXFET Type P-Channel MOSFET, 11 A, 55 V Enhancement, 3-Pin IPAK IRFU9024NPBF
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 6.22mm |
| Length | 6.73mm |
| Model | IRFU9024NPBF |
| Width | 2.39mm |
| Mount Type | Through Hole |
| Series | HEXFET |
| Maximum Operating Temperature | 150°C |
| Package Type | IPAK |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 11A |
| Maximum Drain Source Voltage Vds | 55V |
| Maximum Drain Source Resistance Rds | 175mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 38W |
| Typical Gate Charge Qg @ Vgs | 19nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | -1.6V |
| P-channel MOSFET,IRFU9024N 11A 55VBrand | International Rectifier |
Key Features
- Low on-resistance of 175 milliohms enhances energy efficiency.
- Maximum power dissipation rating of 38 watts supports robust operation.
- Through-hole IPAK package with 3 pins allows easy PCB integration.
- Operates reliably within a wide temperature range of -55°C to 150°C.
- Suitable for use in power supplies, motor controls, and battery management systems.
- Single transistor configuration simplifies electronic circuit designs.
- Complies with lead-free standards for environmentally responsible applications.
- Gate-source voltage range of -20 V to +20 V gives design flexibility.
Product Description
The Infineon IRFU9024NPBF is a HEXFET Series P-channel enhancement MOSFET with a maximum continuous drain current of 11 amperes and a drain-source voltage up to 55 volts. This 3-pin IPAK package device offers low on-resistance of 175 milliohms and a maximum power dissipation capability of 38 watts, making it ideal for efficient power management circuits.
Designed for through-hole mounting, it provides easy implementation on standard PCBs for a variety of industrial and commercial electronics applications. It withstands operating temperatures ranging from -55°C to 150°C, ensuring reliable performance in harsh environments.
This MOSFET is well suited for use in power supplies, motor control systems, and battery management applications, delivering efficient energy conversion and control with minimal losses. The device also complies with lead-free environmental standards, supporting sustainable electronics manufacturing.
The gate-source voltage range of -20 to +20 volts allows flexible driving conditions, with typical gate charge of 19 nanocoulombs for responsive switching. The transistor features a forward voltage of -1.6 volts.
Low Rds(on) of 175 milliohms reduces conduction losses and improves efficiency. Maximum power dissipation of 38 watts supports handling moderate power loads. Through-hole IPAK package facilitates robust mechanical and electrical connections.
Wide operating temperature range from -55°C up to 150°C ensures device stability. Single transistor simplifies design in power and switching circuits. Lead-free compliance supports eco-friendly electronics manufacturing.
Compact dimensions suitable for space-constrained applications. Maximum gate-source voltage of ±20 V ensures flexible control input voltages. Applicable in automotive, industrial automation, and consumer electronics power management systems.
Incorporate this Infineon IRFU9024NPBF MOSFET into your electronic projects requiring efficient and reliable power switching. Explore robust and high-performance discrete semiconductor solutions in the MOSFET category at EnvMart.
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Frequently Asked Questions
The maximum continuous drain current for this model is 11 amperes.
It can handle a maximum drain-source voltage of 55 volts.
The on-resistance is 175 milliohms, which enhances energy efficiency.
The maximum power dissipation rating is 38 watts.
The IPAK package dimensions are 6.73mm in length, 2.39mm in width, and 6.22mm in height.
It operates reliably within a wide temperature range of -55°C to 150°C.
The gate-source voltage range is -20 V to +20 V, allowing for design flexibility.
This model uses through-hole mounting, making it easy to integrate into PCBs.
It is suitable for use in power supplies, motor control systems, and battery management applications.
The typical gate charge is 19 nanocoulombs.
It complies with lead-free standards for environmentally responsible applications.
The IPAK package has 3 pins.
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