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Infineon HEXFET N-Channel MOSFET 33A 100V Enhancement Mode 3-Pin TO-247 IRFP140NPBF
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 20.3mm |
| Length | 15.9mm |
| Model | IRFP140NPBF |
| Width | 5.3mm |
| Mount Type | Through Hole |
| Series | HEXFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 33A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 52mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 140W |
| Typical Gate Charge Qg @ Vgs | 94nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.3V |
| N-channel MOSFET,IRFP140N 33A 100VBrand | International Rectifier |
Key Features
- Maximum continuous drain current of 33A supports high load applications.
- Drain-source voltage rating up to 100V ensures reliable high-voltage operation.
- Low maximum drain-source resistance of 52 milliohms reduces conduction losses.
- Designed for power dissipation up to 140W for effective thermal management.
- Typical gate charge of 94 nanocoulombs enables fast switching speeds.
- Operating temperature range from -55°C up to 175°C for harsh environment resilience.
- Constructed in an industry-standard TO-247 through-hole package with 3 pins.
- Enhancement mode channel with N-channel type for typical MOSFET applications.
Product Description
Infineon IRFP140NPBF HEXFET N-Channel MOSFET is a high-performance enhancement mode transistor engineered for power electronics applications requiring up to 33 amps continuous drain current and 100 volts drain-source voltage. It features a rugged 3-pin TO-247 package optimized for through-hole mounting, providing reliable electrical and thermal performance.
This MOSFET exhibits a low maximum drain-source resistance of 52 milliohms, minimizing conduction losses and improving overall device efficiency. Its power dissipation rating of 140 watts supports demanding thermal environments. The typical gate charge of 94 nanocoulombs facilitates rapid switching speeds, making it ideal for high-frequency applications.
Designed to operate effectively between -55°C and +175°C, this component offers excellent reliability under extreme temperature conditions encountered in industrial, automation, and electronic power conversion systems. Its robust performance supports switching power supplies, motor controls, power amplifiers, and power management circuits in various industrial, laboratory, and commercial applications.
The TO-247 package provides easy integration into manually soldered or automated PCB assembly processes. The component is compatible with standard power system voltages and currents, ensuring versatility across a wide range of power electronics designs.
Maximum continuous drain current: 33A. Drain-source voltage rating: 100V. Maximum drain-source resistance: 52 milliohms. Maximum power dissipation: 140W. Typical gate charge: 94nC at 10V. Operating temperature range: -55°C to +175°C.
Package type: TO-247, 3-pin. Mount type: Through hole.
Infineon IRFP140NPBF delivers reliable power management solutions for industrial automation, electronics manufacturing, HVAC controls, and other mechanical system applications. Discover more products in the MOSFET category at EnvMart for high-quality semiconductor components.
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Frequently Asked Questions
The maximum continuous drain current for this model is 33A.
The drain-source voltage rating is up to 100V, ensuring reliable high-voltage operation.
It has a maximum power dissipation rating of 140W, suitable for effective thermal management.
The typical gate charge is 94 nanocoulombs, which enables fast switching speeds.
This MOSFET operates effectively within a temperature range of -55°C to +175°C.
It is constructed in a TO-247 package, which is a through-hole type with 3 pins.
The maximum drain-source resistance is 52 milliohms, which helps reduce conduction losses.
This model features an N-channel type for typical MOSFET applications.
The maximum gate-source voltage is -20V to +20V.
The dimensions are 20.3mm in height, 15.9mm in length, and 5.3mm in width.
It is suitable for applications such as switching power supplies, motor controls, and power management circuits.
The forward voltage is 1.3V.
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