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Vishay N-Channel Power MOSFET, 16 A, 400 V, Enhancement Mode, TO-247 3-Pin IRFP350PBF
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Height | 20.7mm |
| Length | 15.87mm |
| Model | IRFP350PBF |
| Width | 5.31mm |
| Mount Type | Through Hole |
| Series | IRFP |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 16A |
| Maximum Drain Source Voltage Vds | 400V |
| Maximum Drain Source Resistance Rds | 300mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 190W |
| Typical Gate Charge Qg @ Vgs | 150nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.6V |
| N-channel MOSFET,IRFP350 16A 400V 25pcsBrand | Vishay |
| N-Channel MOSFET Transistor, 16 A, 400 V, 3-Pin TO-247AC Vishay IRFP350Brand | Vishay |
Key Features
- This MOSFET operates in enhancement mode for efficient switching.
- It supports maximum power dissipation of 190 W ensuring robust performance.
- Maximum drain-source resistance (Rds) is 300 milliohms.
- Typical gate charge is 150 nanocoulombs at gate-source voltage.
- Supports a wide operating temperature range from -55°C to 150°C.
- Maximum gate-source voltage ranges from -20 V to +20 V.
- It is a through-hole mount type device suitable for high-power applications.
- The device is suitable for industrial electronics, power management, and semiconductor applications.
Product Description
The Vishay IRFP350PBF is a high-performance N-Channel Power MOSFET designed for applications requiring robust switching with a drain current capacity of 16 A and a drain-source voltage tolerance of up to 400 V. Housed in a TO-247 3-pin package, it is built to withstand significant power levels with maximum power dissipation rating of 190 W, making it suitable for demanding industrial environments.
Operating in enhancement mode, this MOSFET features a low typical drain-source resistance of 300 milliohms which helps in achieving efficient conduction with minimal losses. The device supports a typical gate charge of 150 nC at Vgs, enabling fast switching performance essential in power electronic circuits.
It operates reliably across a wide temperature range from -55°C to 150°C and is designed for through-hole mounting, allowing easy integration into various PCB layouts. The gate-source voltage can vary between -20 V to +20 V enabling flexible control in various circuit configurations.
Its compact dimensions of 20.7 mm height, 15.87 mm length, and 5.31 mm width allow for space-efficient designs while providing the electrical performance needed for power management, motor control, industrial drive circuits, and other semiconductor applications.
This MOSFET ensures durability and reliability in industrial and manufacturing environments. Its specifications make it ideal for power switching, voltage regulation, and load driving tasks. The TO-247 package supports effective heat dissipation under high-power loads.
Vishay's built quality assures compliance with industry standards for performance. Suitable for use in electronic component assembly, discrete semiconductor replacement, and power electronics upgrades. Explore our extensive range of power MOSFETs and semiconductor components at EnvMart to meet your electronics design and manufacturing needs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 16 A.
It has a maximum drain-source voltage rating of 400 V.
The maximum power dissipation for this device is rated at 190 W.
The typical gate charge at gate-source voltage is 150 nanocoulombs (nC).
The dimensions of the TO-247 package are 20.7 mm in height, 15.87 mm in length, and 5.31 mm in width.
It operates reliably across a temperature range from -55°C to 150°C.
The maximum gate-source voltage ranges from -20 V to +20 V.
This model supports through-hole mounting, making it suitable for various PCB layouts.
The maximum drain-source resistance (Rds) is 300 milliohms.
It is suitable for industrial electronics, power management, and semiconductor applications.
The TO-247 package has a pin count of 3.
This model is an N-channel MOSFET, designed for enhancement mode operation.
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