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STMicroelectronics MDmesh SuperMESH N-Channel MOSFET 800 V, 4.3 A, 30 W, Enhancement Mode, TO-220 Package STP5NK80ZFP
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 9.3mm |
| Length | 10.4mm |
| Model | STP5NK80ZFP |
| Width | 4.6mm |
| Mount Type | Through Hole |
| Series | MDmesh, SuperMESH |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 4.3A |
| Maximum Drain Source Voltage Vds | 800V |
| Maximum Drain Source Resistance Rds | 2.4Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 30W |
| Typical Gate Charge Qg @ Vgs | 32.4nC |
| Maximum Gate Source Voltage Vgs | -30, +30V |
| Forward Voltage Vf | 1.6V |
Key Features
- Enhancement mode N-Channel device suitable for high voltage switching applications.
- TO-220 through-hole package provides easy mounting and reliable mechanical support.
- Maximum continuous drain current of 4.3 amperes ensures effective power handling.
- Maximum drain-source voltage of 800 volts allows for high-voltage operation.
- Low on-resistance of 2.4 ohms minimizes conduction losses.
- High maximum power dissipation of 30 watts ensures thermal reliability.
- Operating temperature range from -55°C up to 150°C for wide environmental adaptability.
- Typical gate charge of 32.4 nanocoulombs for efficient switching performance.
Product Description
The STMicroelectronics STP5NK80ZFP is a high-performance MDmesh SuperMESH N-Channel MOSFET designed for industrial and electronic applications requiring efficient high-voltage switching capability. Featuring an 800 V maximum drain-source voltage and a continuous drain current of 4.3 A, this device operates in enhancement mode to provide reliable and robust switching.
Housed in a 3-pin TO-220 through-hole package, the MOSFET offers ease of mounting and superior mechanical durability. Its low drain-source resistance of 2.4 ohms reduces conduction losses, enhancing overall circuit efficiency.
The device supports a maximum power dissipation of 30 W, enabling it to maintain performance under demanding thermal conditions. Its operating temperature range from -55°C to 150°C ensures suitability for various industrial environments, including automotive and power management systems.
This MOSFET features a typical gate charge of 32.4 nC facilitating rapid switching, while the gate-source voltage limits of -30 V to +30 V protect it from voltage transients during operation. The forward voltage drop of 1.6 V makes it effective for power conversion applications.
Applications include power supplies, motor drives, lighting controls, and other electronic devices requiring high voltage and efficient conduction with compact packaging. Enhancement mode N-Channel transistor with MDmesh SuperMESH design.
High voltage rating suitable for industrial power systems. Enhanced thermal performance with 30 W dissipation capability. Suitable for through-hole mounting on PCB. Robust gate voltage tolerance and stable switching parameters.
Ideal for use in power switching, motor control, and electronic converters.
STMicroelectronics products are well-known for quality and performance in semiconductor components, ensuring consistency and reliability for demanding electrical and electronic applications. Explore more semiconductor and MOSFET options in EnvMart's Electronics & Electricals category for comprehensive selection.
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Frequently Asked Questions
The maximum continuous drain current for this model is 4.3 amperes.
It has a maximum drain-source voltage of 800 volts, allowing for high-voltage operation.
This device is housed in a TO-220 through-hole package, which provides ease of mounting and mechanical support.
The operating temperature range is from -55°C to 150°C, making it suitable for various industrial environments.
The typical gate charge is 32.4 nanocoulombs, facilitating efficient switching performance.
It supports a maximum power dissipation of 30 watts, ensuring thermal reliability under demanding conditions.
The forward voltage drop for this model is 1.6 volts, making it effective for power conversion applications.
The maximum gate-source voltage limits are -30 V to +30 V, providing protection from voltage transients during operation.
The low drain-source resistance of 2.4 ohms minimizes conduction losses, enhancing overall circuit efficiency.
This model is suitable for applications such as power supplies, motor drives, and lighting controls that require high voltage and efficient conduction.
The MOSFET has a pin count of 3, which is typical for its TO-220 package design.
It belongs to the MDmesh and SuperMESH series, known for their high-performance characteristics in high-voltage applications.
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