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Infineon Transistor NPN 45 mA 15 V 3-Pin SOT-23 BFR92PE6327HTSA1

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Infineon Transistor NPN 45 mA 15 V 3-Pin SOT-23 BFR92PE6327HTSA1

Name: Infineon Transistor NPN 45 mA 15 V 3-Pin SOT-23 BFR92PE6327HTSA1
Brand: Infineon
SKU: 186082
Price: 0.25 USD
Availability: InStock

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Category Bipolar Transistors Brand Infineon Condition New

Specifications

Country of Origin	India
Brand	Infineon
Height	1.1mm
Length	2.9mm
Model	BFR92PE6327HTSA1
Width	2.4mm
Mount Type	Surface
Series	BFR92P
Maximum Operating Temperature	150°C
Package Type	SOT-23
Pin Count	3
Maximum Collector Emitter Voltage Vceo	15V
Minimum DC Current Gain hFE	70
Transistor Polarity	NPN
Maximum Emitter Base Voltage VEBO	2.5V
Maximum Collector Base Voltage VCBO	20V
Automotive Standard	AEC-Q101
Maximum Power Dissipation Pd	280mW
Maximum DC Collector Current Idc	45mA
Transistor Configuration	Single
Maximum Transition Frequency ft	5000MHz
Infineon BFR35APE6327HTSA1 Transistor, 45 mA NPN, 15 V, 3-Pin SOT-23Brand	Infineon

Key Features

This transistor supports a maximum power dissipation of 280 mW.
It has a minimum DC current gain (hFE) of 70 for reliable amplification.
The maximum transition frequency is 5000 MHz, enabling RF applications.
Designed with surface mount Type SOT-23, it simplifies PCB assembly.
The product withstands operating temperatures up to 150°C, suitable for demanding environments.
Its automotive standard qualification is AEC-Q101 for high reliability.
The transistor configuration is single, providing precise switching capabilities.

Product Description

Infineon BFR92PE6327HTSA1 is a high-frequency NPN bipolar transistor optimized for RF applications. It supports a maximum DC collector current of 45 mA and a collector-emitter voltage rating of 15 V, housed in a compact 3-pin SOT-23 surface mount package.

This transistor features a minimum DC current gain (hFE) of 70, ensuring effective signal amplification in circuits requiring stable gain characteristics. With a maximum power dissipation of 280 mW, it is capable of handling moderate power levels without overheating.

The device offers a maximum transition frequency of 5000 MHz, making it ideal for high-frequency RF circuits in communications, instrumentation, and other electronics requiring fast switching and signal integrity.

Its package dimensions of 2.9 mm length, 2.4 mm width, and 1.1 mm height complement modern compact electronic designs needing surface mount technology (SMT) components. The transistor is qualified under the automotive standard AEC-Q101, demonstrating suitability for use in automotive electronics where reliability is critical.

Typical industrial applications for the BFR92PE6327HTSA1 transistor include RF amplification, signal switching, and low noise amplification in industrial, communication, and automotive sectors.

This transistor supports a maximum power dissipation of 280 mW. It has a minimum DC current gain (hFE) of 70 for reliable amplification. The maximum transition frequency is 5000 MHz, enabling RF applications. Designed with surface mount Type SOT-23, it simplifies PCB assembly.

The product withstands operating temperatures up to 150°C, suitable for demanding environments. Its automotive standard qualification is AEC-Q101 for high reliability. The transistor configuration is single, providing precise switching capabilities.

Compact dimensions: 2.9 mm length, 2.4 mm width, 1.1 mm height. Explore the extensive range of Bipolar Transistors and other semiconductor components for your electronic applications at EnvMart.