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Infineon NPN Transistor 45 mA 15 V 3-Pin Surface Mount SOT-23 Package BFR92PE6327HTSA1

Category Bipolar Transistors Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Height 1.1mm
Length 2.9mm
Model BFR92PE6327HTSA1
Width 2.4mm
Mount Type Surface
Series BFR92P
Maximum Operating Temperature 150°C
Package Type SOT-23
Pin Count 3
Maximum Collector Emitter Voltage Vceo 15V
Minimum DC Current Gain hFE 70
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 2.5V
Maximum Collector Base Voltage VCBO 20V
Automotive Standard AEC-Q101
Maximum Power Dissipation Pd 280mW
Maximum DC Collector Current Idc 45mA
Transistor Configuration Single
Maximum Transition Frequency ft 5000MHz

Key Features

  • The device has a maximum collector-emitter voltage of 15 V allowing medium voltage applications.
  • It features a minimum DC current gain (hFE) of 70 for effective amplification.
  • Maximum power dissipation of 280 mW enables efficient operation within thermal limits.
  • The transistor operates at transition frequencies up to 5 GHz suitable for RF applications.
  • Compact dimensions of 2.9 mm length, 2.4 mm width, and 1.1 mm height support dense PCB layouts.
  • It complies with AEC-Q101 automotive standard ensuring reliability in automotive use.
  • The device supports operation up to 150°C maximum temperature for harsh environments.
  • Surface mount SOT-23 package allows automated assembly on PCBs.

Product Description

Infineon BFR92PE6327HTSA1 is an NPN bipolar transistor housed in a compact 3-pin SOT-23 surface mount package designed for medium current and voltage applications. It supports a maximum DC collector current of 45 mA and a collector-emitter voltage up to 15 V, suitable for a variety of electronic circuits requiring small signal amplification and switching.

This transistor features a minimum DC current gain of 70 and can operate at high transition frequencies of up to 5 GHz, making it well-suited for radio frequency and high-speed switching uses. Its maximum power dissipation is rated at 280 mW, providing stable performance under moderate load conditions.

The device’s compact package measures 2.9 mm in length, 2.4 mm in width, and 1.1 mm in height, supporting efficient PCB space utilization in dense circuit designs. It conforms to the automotive grade AEC-Q101 standard, assuring enhanced reliability for automotive and industrial applications.

Operating temperature up to 150°C allows use in harsh environments. The single transistor configuration and NPN polarity make it versatile for amplification and switching use cases in industrial, automotive, telecommunications, and consumer electronics equipment.

The device has a maximum collector-emitter voltage of 15 V allowing medium voltage applications. It features a minimum DC current gain (hFE) of 70 for effective amplification. Maximum power dissipation of 280 mW enables efficient operation within thermal limits.

The transistor operates at transition frequencies up to 5 GHz suitable for RF applications. Compact dimensions of 2.9 mm length, 2.4 mm width, and 1.1 mm height support dense PCB layouts. It complies with AEC-Q101 automotive standard ensuring reliability in automotive use.

The device supports operation up to 150°C maximum temperature for harsh environments. Surface mount SOT-23 package allows automated assembly on PCBs. Single transistor configuration with NPN polarity is suitable for switching and amplification tasks.

This bipolar transistor is ideal for applications in RF circuits, automotive electronics, telecommunications, and general-purpose amplification and switching in compact electronic devices. It is compatible with automated manufacturing lines due to its surface mount form factor.

Explore more Bipolar Transistors and semiconductor components for your electronic design and manufacturing needs in our comprehensive EnvMart catalog.

Infineon NPN Transistor 45 mA 15 V 3-Pin Surface Mount SOT-23 Package BFR92PE6327HTSA1
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Frequently Asked Questions

The maximum collector-emitter voltage (Vceo) of this transistor is 15 V, making it suitable for medium voltage applications.

This model supports a maximum DC collector current of 45 mA, allowing it to handle moderate current levels in various applications.

It features a minimum DC current gain (hFE) of 70, which is effective for amplification purposes.

The maximum power dissipation for this transistor is rated at 280 mW, ensuring efficient operation within thermal limits.

The dimensions of this model are 2.9 mm in length, 2.4 mm in width, and 1.1 mm in height, which supports dense PCB layouts.

This transistor can operate at a maximum temperature of 150°C, making it suitable for harsh environments.

It operates at transition frequencies up to 5 GHz, making it suitable for RF applications.

It complies with the AEC-Q101 automotive standard, ensuring reliability in automotive applications.

The device is housed in a surface mount SOT-23 package, which allows for automated assembly on PCBs.

This model features a single transistor configuration with NPN polarity, suitable for various amplification and switching tasks.

The maximum collector-base voltage (VCBO) is 20 V, providing additional operational flexibility.

This transistor is suitable for applications in RF circuits, automotive electronics, telecommunications, and general-purpose amplification and switching.

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