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| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 1.1mm |
| Length | 2.9mm |
| Model | BFR92PE6327HTSA1 |
| Width | 2.4mm |
| Mount Type | Surface |
| Series | BFR92P |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-23 |
| Pin Count | 3 |
| Maximum Collector Emitter Voltage Vceo | 15V |
| Minimum DC Current Gain hFE | 70 |
| Transistor Polarity | NPN |
| Maximum Emitter Base Voltage VEBO | 2.5V |
| Maximum Collector Base Voltage VCBO | 20V |
| Automotive Standard | AEC-Q101 |
| Maximum Power Dissipation Pd | 280mW |
| Maximum DC Collector Current Idc | 45mA |
| Transistor Configuration | Single |
| Maximum Transition Frequency ft | 5000MHz |
Infineon BFR92PE6327HTSA1 is an NPN bipolar transistor housed in a compact 3-pin SOT-23 surface mount package designed for medium current and voltage applications. It supports a maximum DC collector current of 45 mA and a collector-emitter voltage up to 15 V, suitable for a variety of electronic circuits requiring small signal amplification and switching.
This transistor features a minimum DC current gain of 70 and can operate at high transition frequencies of up to 5 GHz, making it well-suited for radio frequency and high-speed switching uses. Its maximum power dissipation is rated at 280 mW, providing stable performance under moderate load conditions.
The device’s compact package measures 2.9 mm in length, 2.4 mm in width, and 1.1 mm in height, supporting efficient PCB space utilization in dense circuit designs. It conforms to the automotive grade AEC-Q101 standard, assuring enhanced reliability for automotive and industrial applications.
Operating temperature up to 150°C allows use in harsh environments. The single transistor configuration and NPN polarity make it versatile for amplification and switching use cases in industrial, automotive, telecommunications, and consumer electronics equipment.
The device has a maximum collector-emitter voltage of 15 V allowing medium voltage applications. It features a minimum DC current gain (hFE) of 70 for effective amplification. Maximum power dissipation of 280 mW enables efficient operation within thermal limits.
The transistor operates at transition frequencies up to 5 GHz suitable for RF applications. Compact dimensions of 2.9 mm length, 2.4 mm width, and 1.1 mm height support dense PCB layouts. It complies with AEC-Q101 automotive standard ensuring reliability in automotive use.
The device supports operation up to 150°C maximum temperature for harsh environments. Surface mount SOT-23 package allows automated assembly on PCBs. Single transistor configuration with NPN polarity is suitable for switching and amplification tasks.
This bipolar transistor is ideal for applications in RF circuits, automotive electronics, telecommunications, and general-purpose amplification and switching in compact electronic devices. It is compatible with automated manufacturing lines due to its surface mount form factor.
Explore more Bipolar Transistors and semiconductor components for your electronic design and manufacturing needs in our comprehensive EnvMart catalog.
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